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KBU608

Description
Single Phase 6.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers
CategoryDiscrete semiconductor    diode   
File Size141KB,3 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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KBU608 Overview

Single Phase 6.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 6.0A Silicon Bridge Rectifiers


Product model: KBU608


product features:


UL Recognized File # E-230084


Surge overload rating-200-300 amperes peak


Ideal for printed circuit boards


Reliable low cost construction utilizing molded plastic technique


Mounting Polsition:Any


Mounting Torgue:5 In.Ib.Max.



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 800V



Maximum RMS Voltage VRMS Voltage effective value: 560V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 800V



Maximum Average Forward TC = 100℃ IF(AV) Maximum forward current: 6.0 A


Rectified Current at TA = 50℃ IF(AV) Maximum forward current: 6.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 250 A



Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.1 V



Maximum Reverse Leakage at rated TA=25℃ IR Maximum reverse leakage current: 5μA


DC blocking voltage per leg TC = 100℃ IR Maximum reverse leakage current: 1mA



Operating and Storage Temperature Range TJ Operating Junction Temperature, TSTG Storage Temperature Range: -55 to +150 ℃



Package: KBU


KBU608 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
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