8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
Parameter Name | Attribute value |
Number of functions | 1 |
Number of terminals | 28 |
Maximum operating temperature | 85 Cel |
Minimum operating temperature | -40 Cel |
Maximum supply/operating voltage | 5.5 V |
Minimum supply/operating voltage | 4.5 V |
Rated supply voltage | 5 V |
maximum access time | 45 ns |
Processing package description | 0.300 INCH, ROHS COMPLIANT, CERAMIC, DIP-28 |
state | ACTIVE |
Craftsmanship | CMOS |
packaging shape | RECTANGULAR |
Package Size | IN-LINE |
Terminal form | THROUGH-HOLE |
Terminal spacing | 2.54 mm |
terminal coating | TIN LEAD |
Terminal location | DUAL |
Packaging Materials | CERAMIC, METAL-SEALED COFIRED |
Temperature level | INDUSTRIAL |
memory width | 8 |
organize | 8K X 8 |
storage density | 65536 deg |
operating mode | SYNCHRONOUS |
Number of digits | 8192 words |
Number of digits | 8K |
Memory IC type | NON-VOLATILE SRAM |
serial parallel | PARALLEL |