Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, CERAMIC PACKAGE-2
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-3 |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Avalanche Energy Efficiency Rating (Eas) | 190 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 11 A |
| Maximum drain-source on-resistance | 0.325 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 75 W |
| Maximum pulsed drain current (IDM) | 44 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 140 ns |
| Maximum opening time (tons) | 100 ns |
| IRH9130PBF | |
|---|---|
| Description | Power Field-Effect Transistor, 11A I(D), 100V, 0.325ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, CERAMIC PACKAGE-2 |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-3 |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Avalanche Energy Efficiency Rating (Eas) | 190 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 11 A |
| Maximum drain-source on-resistance | 0.325 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 75 W |
| Maximum pulsed drain current (IDM) | 44 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 140 ns |
| Maximum opening time (tons) | 100 ns |
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