GSD2004A-GS18 datasheet, PDF - EEWORLD Datasheet

GSD2004A-GS18: Description0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB; CategoryDiscrete semiconductor diode; File Size71KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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GSD2004A-GS18 Overview

0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
ECCN code	EAR99
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.87 V
JESD-609 code	e3
Maximum non-repetitive peak forward current	4 A
Maximum operating temperature	150 °C
Maximum repetitive peak reverse voltage	300 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Base Number Matches	1

	GSD2004A-GS18	GSD2004A	GSD2004A-GS08
Description	0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB	0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB	0.225 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Is it Rohs certified?	conform to	incompatible	conform to
Reach Compliance Code	compli	unknow	compli
ECCN code	EAR99	EAR99	EAR99
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.87 V	0.87 V	0.87 V
JESD-609 code	e3	e0	e3
Maximum non-repetitive peak forward current	4 A	4 A	4 A
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum repetitive peak reverse voltage	300 V	300 V	300 V
Maximum reverse recovery time	0.05 µs	0.05 µs	0.05 µs
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Base Number Matches	1	1	-

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