MAL5104CD datasheet, PDF - EEWORLD Datasheet

MAL5104CD: DescriptionStandard SRAM, 4KX1, 135ns, CMOS, CDIP18; Categorystorage storage; File Size218KB，12 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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MAL5104CD Overview

Standard SRAM, 4KX1, 135ns, CMOS, CDIP18

Parameter Name	Attribute value
Maker	Dynex
package instruction	,
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	135 ns
JESD-30 code	R-CDIP-T18
memory density	4096 bi
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	18
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	4KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal location	DUAL

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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