STP3NC50 datasheet, PDF - EEWORLD Datasheet

STP3NC50: DescriptionN-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET; CategoryDiscrete semiconductor The transistor; File Size162KB，8 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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STP3NC50 Overview

N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh⑩II MOSFET

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	TO-220, 3 PIN
Contacts	3
Reach Compliance Code	_compli
Avalanche Energy Efficiency Rating (Eas)	110 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	2.8 A
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	11.2 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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