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Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMSS8550
Features
•
•
•
•
•
•
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking Code: Y2
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
DC Current Gain
(I
C
=800mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base-Emitter Saturation Voltage
(I
C
=800mAdc, I
B
=80mAdc)
Base- Emitter Voltage
(I
E
=1.5Adc)
Transistor Frequency
(I
C
=50mAdc, V
CE
=10Vdc, f=30MHz)
Min
40
25
6.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
Vdc
uAdc
uAdc
uAdc
G
F
E
C
B
H
J
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
40
---
---
---
350
---
0.5
1.2
1.6
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
100
---
MHz
.035
.900
Suggested Solder
Pad Layout
.031
.800
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
.079
2.000
inches
mm
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