www.fairchildsemi.com
FSCM0565R
Features
Green Mode Fairchild Power Switch (FPS
TM
)
• Internal Avalanche Rugged SenseFET
• Low Start-up Current (max 40uA)
• Low Power Consumption under 1 W at 240VAC and
0.4W Load
• Precise Fixed Operating Frequency (66kHz)
• Frequency Modulation for low EMI
• Pulse by Pulse Current Limiting (Adjustable)
• Over Voltage Protection (OVP)
• Over Load Protection (OLP)
• Thermal Shutdown Function (TSD)
• Auto-Restart Mode
• Under Voltage Lock Out (UVLO) with Hysteresis
• Built-in Soft Start (15ms)
OUTPUT POWER TABLE
230VAC
±15%
(3)
PRODUCT
FSCM0565RJ
FSCM0765RJ
FSCM0565RI
FSCM0765RI
FSCM0565RG
FSCM0765RG
Adapt-
er
(1)
50W
65W
50W
65W
70W
85W
Open
Frame
(2)
65W
70W
65W
70W
85W
95W
85-265VAC
Adapt-
er
(1)
40W
50W
40W
50W
60W
70W
Open
Frame
(2)
50W
60W
50W
60W
70W
85W
Table 1. Maximum Output Power
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter measured at 50°C ambient.
2. Maximum practical continuous power in an open-frame
design at 50°C ambient.
3. 230 VAC or 100/115 VAC with doubler.
Application
• SMPS for VCR, SVR, STB, DVD and DVCD
• Adaptor
• SMPS for LCD Monitor
Related Application Notes
•
AN-4137:
Design Guidelines for Off-line Flyback
Converters Using Fairchild Power Switch (FPS)
•
AN-4140:
Transformer Design Consideration for off-line
Flyback Converters using Fairchild Power Switch
•
AN-4141:
Troubleshooting and Design Tips for Fairchild
Power Switch Flyback Applications
•
AN-4148:
Audible Noise Reduction Techniques for FPS
Applications
Typical Circuit
DC
OUT
AC
IN
Description
The FSCM0565R is an integrated Pulse Width Modulator
(PWM) and SenseFET specifically designed for high
performance offline Switch Mode Power Supplies (SMPS)
with minimal external components. This device is an
integrated high voltage power switching regulator which
combines an avalanche rugged SenseFET with a current
mode PWM control block. The PWM controller includes
integrated fixed frequency oscillator, under voltage lockout,
leading edge blanking (LEB), optimized gate driver, internal
soft start, temperature compensated precise current sources
for a loop compensation, and self protection circuitry.
Compared with a discrete MOSFET and PWM controller
solution, it can reduce total cost, component count, size
,
and
weight while simultaneously increasing efficiency, productivity,
and system reliability. This device is a basic platform well
suited for cost effective designs of flyback converters.
FPS
TM
is a trademark of Fairchild Semiconductor Corporation
PWM
I
limit
Vfb
Vcc
Drain
GND
Figure 1. Typical Flyback Application
Rev.1.1.0
©2005 Fairchild Semiconductor Corporation
FSCM0565R
Pin Definitions
Pin Number
1
2
3
Pin Name
Drain
GND
V
CC
Pin Function Description
This pin is the high voltage power SenseFET drain. It is designed to drive the
transformer directly.
This pin is the control ground and the SenseFET source.
This pin is the positive supply voltage input. Initially, During start up, the power is
supplied through the startup resistor from DC link. When Vcc reaches 12V, the
power is supplied from the auxiliary transformer winding.
This pin is internally connected to the inverting input of the PWM comparator.
The collector of an optocoupler is typically tied to this pin. For stable operation, a
capacitor should be placed between this pin and GND. If the voltage of this pin
reaches 6.0V, the over load protection is activated resulting in shutdown of the
FPS.
This pin is not connected.
This pin is for the pulse by pulse current limit level programming. By using a
resistor to GND on this pin, the current limit level can be changed. If this pin is
left floating, the typical current limit will be 2.5A.
4
Feedback (FB)
5
6
N.C.
I
limit
Pin Configuration
FSCM0565RJ
D2-PAK-6L
FSCM0565RI
I2-PAK-6L
FSCM0565RJ
FSCM0565RI
6 : I_limit
5 : N.C.
4 : FB
3 : Vcc
2 : GND
1 : Drain
6 : I_limit
5 : N.C.
4 : FB
3 : Vcc
2 : GND
1 : Drain
FSCM0565RG
TO-220-6L
FSCM0565RG
6. I_limit
5. N.C.
4. FB
3. Vcc
2. GND
1. Drain
Figure 3. Pin Configuration (Top View)
3
FSCM0565R
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified.)
Parameter
Drain-Source (GND) Voltage
(1)
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(2)
Continuous Drain Current (D2-PAK, I2-PAK)
@ Tc = 25°C
@ Tc =100°C
Continuous Drain Current (TO-220)
@ Tc = 25°C
@ Tc =100°C
Supply Voltage
Analog Input Voltage Range
Total Power Dissipation (D2-PAK,I2-PAK)
Total Power Dissipation (TO-220)
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
ESD Capability, HBM Model
(All pins except Vfb)
ESD Capability, Machine Model
(All pins except Vfb)
I
D
I
D
V
CC
V
FB
P
D
P
D
T
J
T
A
T
STG
-
Symbol
V
DSS
V
DGR
V
GS
I
DM
I
D
I
D
Value
650
650
±30
20
3.9
2.5
5
3.2
20
-0.3 to V
CC
75
120
Internally limited
-25 to +85
-55 to +150
2.0
(GND-Vfb = 1.5kV)
(Vcc-Vfb = 1.0kV)
300
(GND-Vfb = 250V)
(Vcc-Vfb = 100V)
Unit
V
V
V
A
DC
A
DC
A
DC
A
DC
A
DC
V
V
W
W
°C
°C
°C
kV
-
V
Notes:
1. T
j
= 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
.
Thermal Impedance
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal (D2-PAK, I2-PAK)
Junction-to-Case Thermal (TO-220)
Note:
1. Free standing with no heat-sink under natural convection
2. Infinite cooling condition - Refer to the SEMI G30-88.
Symbol
Value
-
1.7
1.0
Unit
°C/W
°C/W
°C/W
θ
JA
(1)
θ
JC
(2)
θ
JC
(2)
4
FSCM0565R
Electrical Characteristics
(Ta = 25°C unless otherwise specified.)
Parameter
SenseFET SECTION
Drain Source Breakdown Voltage
Zero-Gate-Voltage Current
Static Drain Source on Resistance
(1)
Output Capacitance
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
CONTROL SECTION
Initial Frequency
Modulated Frequency Range
Frequency Modulation Cycle
Voltage Stability
Temperature Stability
(2)
Maximum Duty Cycle
Minimum Duty Cycle
Start Threshold Voltage
Stop Threshold Voltage
Feedback Source Current
Soft-start Time
BURST MODE SECTION
Burst Mode Voltages
(2)
V
BH
VB
L
V
CC
=14V
V
CC
= 14V
0.4
0.24
0.5
0.3
0.6
0.36
V
V
F
OSC
ΔF
mod
T
mod
F
STABLE
ΔF
OSC
D
MAX
D
MIN
V
START
V
STOP
I
FB
T
SS
V
CC
= 14V, V
FB
= 5V
-
-
10V
≤
V
CC
≤
17V
−25°C ≤
Ta
≤
+85°C
-
-
V
FB
= GND
V
FB
= GND
V
FB
= GND
-
60
-
-
0
-
75
-
11
7
0.7
10
66
±3
4
1
±5
80
-
12
8
0.9
15
72
-
-
3
±10
85
0
13
9
1.1
20
kHz
kHz
ms
%
%
%
%
V
V
mA
ms
BV
DSS
I
DSS
R
DS(ON)
C
OSS
T
D(ON)
T
R
T
D(OFF)
T
F
V
GS
= 0V, I
D
= 250μA
V
DS
= Max, Rating
V
GS
= 0V
V
GS
= 10V, I
D
= 2.3A
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
V
DD
= 325V, I
D
= 5A
(MOSFET switching
time is essentially
independent of
operating temperature)
650
-
-
-
-
-
-
-
-
-
1.76
78
22
52
95
50
-
500
2.2
-
-
-
ns
-
-
V
μA
Ω
Symbol
Condition
Min.
Typ.
Max.
Unit
pF
Notes:
1. Pulse Test: Pulse width
≤
300μS, duty
≤
2%
2. These parameters, although guaranteed at the design, are not tested in mass production.
5
京公网安备 11010802033920号
EEWORLD
