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IRFI830

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size124KB,1 Pages
ManufacturerThomson Consumer Electronics
Download Datasheet Parametric View All

IRFI830 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IRFI830 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerThomson Consumer Electronics
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)3.1 A
Maximum drain current (ID)3.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Number of components1
Operating modeENHANCEMENT MODE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)32 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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