Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Thomson Consumer Electronics |
package instruction | , |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Configuration | Single |
Maximum drain current (Abs) (ID) | 3.1 A |
Maximum drain current (ID) | 3.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Number of components | 1 |
Operating mode | ENHANCEMENT MODE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 32 W |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |