U630H64BS2K35 datasheet, PDF - EEWORLD Datasheet

U630H64BS2K35: DescriptionNon-Volatile SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.330 INCH, SOP2-28; Categorystorage storage; File Size210KB，15 Pages; ManufacturerZentrum Mikroelektronik Dresden AG (IDT)

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U630H64BS2K35 Overview

Non-Volatile SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.330 INCH, SOP2-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zentrum Mikroelektronik Dresden AG (IDT)
Parts packaging code	SOIC
package instruction	SOP, SOP28,.5
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	35 ns
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP28,.5
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	2.85 mm
Maximum standby current	0.001 A
Maximum slew rate	0.085 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	8.405 mm

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