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BAV70

Description
0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BAV70 Overview

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV70 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2500 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum average forward current0.2000 A
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