DMG96401
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
DMG56401 in SSMini6 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: E6
Basic Part Number
DRC2114E + DRA2114E (Individual)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
(C1)
6
Tr1
Packaging
DMG964010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Collector current
Collector-base voltage (Emitter open)
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
opr
T
stg
Rating
50
50
100
–50
–50
–100
125
150
–40 to +85
–55 to +150
Unit
V
V
mA
V
V
mA
mW
°C
°C
°C
4: Emitter (Tr2)
5: Base (Tr2)
6: Collecter (Tr1)
SSMini6-F3-B
SC-107C
SOT-666
(B2)
5
R
1
R
2
R
2
Tr2
(E2)
4
R
1
1
(E1)
2
(B1)
3
(C2)
Resistance
value
Tr1
Tr2
R
1
R
2
R
1
R
2
10
10
10
10
kΩ
kΩ
kΩ
kΩ
Publication date: December 2013
Ver. FED
1
DMG96401
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
10
1.0
2.1
0.8
+30%
1.2
35
0.25
Min
50
50
0.1
0.5
0.5
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.8
10
1.0
–2.1
– 0.8
+30%
1.2
35
– 0.25
Min
–50
–50
– 0.1
– 0.5
– 0.5
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Ver. FED
2
DMG96401
Common characteristics chart
DMG96401_PT-Ta
P
T
T
a
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Characteristics charts of Tr1
DMG96401(Tr1)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
500
DMG96401(Tr1)_hFE-IC
DMG96401(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
V
CE
=
10 V
10
V
CE(sat)
I
C
I
C
/ I
B
= 20
Collector current I
C
(mA)
I
B
=
350
µA
300
µA
250
µA
Forward current transfer ratio h
FE
100
80
60
40
20
0
400
T
a
=
85°C
300
25°C
200
−40°C
1
200
µA
150
µA
100
µA
50
µA
0
2
4
6
8
10
12
0.1
T
a
=
85°C
−40°C
25°C
100
0
0.1
1
10
100
0.01
0.1
1
10
100
Collector-emitter voltage V
CE
(V)
DMG96401(Tr1)_I
O
-V
IN
Collector current I
C
(mA)
DMG96401(Tr1)_VIN-IO
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
100
V
O
=
0.2 V
10
V
O
= 5 V
T
a
=
85°C
Output current I
O
(mA)
Input voltage V
IN
(V)
1
25°C
10
−1
10
T
a
= −40°C
25°C
1
85°C
10
−2
−40°C
10
−3
0
0.5
1.0
1.5
2.0
0.1
0.1
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
Ver. FED
3
DMG96401
Characteristics charts of Tr2
DMG96401(Tr2)_IC-VCE
I
C
V
CE
−120
T
a
=
25°C
−100
I
B
= −800 µA
−700 µA
−600 µA
−80
−60
−300 µA
−40
−20
−100 µA
0
0
−2
−4
−6
−8
−10
−12
0
−
0.1
−1
−10
−100
−200 µA
−500 µA
−400 µA
300
DMG96401(Tr2)_hFE-IC
h
FE
I
C
DMG96401(Tr2)_VCEsat-IC
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
V
CE
= −10
V
−10
I
C
/ I
B
= 20
Forward current transfer ratio h
FE
250
200
150
100
50
T
a
=
85°C
25°C
Collector current I
C
(mA)
−1
−40°C
−
0.1
T
a
=
85°C
−40°C
25°C
−
0.01
−
0.1
−1
−10
−100
Collector-emitter voltage V
CE
(V)
DMG96401(Tr2)_I
O
-V
IN
Collector current I
C
(mA)
DMG96401(Tr2)_VIN-IO
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
−10
V
O
=
−5
V
T
a
=
85°C
−100
V
O
= −
0.2 V
Output current I
O
(mA)
Input voltage V
IN
(V)
−1
25°C
−10
T
a
= −40°C
25°C
−1
85°C
−10
−1
−10
−2
−40°C
−10
−3
0
−
0.5
−1.0
−1.5
−2.0
−
0.1
−
0.1
−1
−10
−100
Input voltage V
IN
(V)
Output current I
O
(mA)
Ver. FED
4
DMG96401
SSMini6-F3-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. FED
5
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