ALF08N16V datasheet, PDF - EEWORLD Datasheet

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ALF08N16V: DescriptionPower Field-Effect Transistor, 8A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size635KB，4 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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ALF08N16V Overview

Power Field-Effect Transistor, 8A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3

ALF08N16V Parametric

Parameter Name	Attribute value
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH VOLTAGE
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	160 V
Maximum drain current (ID)	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON

ALF08N16V Preview

θ

µA

Ʊ

μ

≤

Typical Output Characteristics

12

10

Drain Current (A)

8

6

4

2

0

20

40

V

DS

(V)

60

V

GS

= 8V

V

GS

= 7V

Pch = 125W

Drain Current (A)

V

GS

= 6V

V

GS

= 5V

V

GS

= 4V

V

GS

= 3V

V

GS

= 2V

V

GS

= 1V

80

9

8

7

6

5

4

3

2

1

0

Typical Output Characteristics

Vgs = 8V

Vgs = 7V

Vgs = 6V

Vgs = 5V

Vgs = 4V

Vgs = 3V

Vgs = 2V

Vgs = 1V

5

V

DS

(V)

10

15

Transfer Characteristic

12

10

Drain current (A)

8

6

4

2

0

5

10

Gate - Source Voltage (V)

15

Transfer Characteristic

0.300

0.250

Drain Current (A)

0.200

0.150

0.100

0.050

0.000

0

0.5

1

1.5

Gate - Source Voltage (V)

+25°C

-25°C

25°C

+75°C

Drain - Source Voltage

vs Gate - Source Voltage

18

Drain - Source Voltage (V)

16

12

10

8

6

4

2

0

2

4

6

8

Gate - Source Voltage (V)

I

D

= 6A

I

D

= 3A

I

D

= 1A

10

Transconductance (s)

14

10

Transconductance

V

DS

= 20V

1

0

2

4

6

I

D

Drain Current (A)

8

10

Safe Operating Area

10

800

Typical Capacitance (pF)

700

600

500

400

300

200

100

0

1

10

100

Drain - Source Voltage (V)

1000

0

Typical Capacitance

vs Gate Source Voltage

V

DS

= 10

f = 1 Mhz

CISS

Drain Current (A)

1

COSS

160V

200V

0.1

CRSS

5

Gate Source Voltage (-V

GS

V)

10

0.01

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ALF08N16V Related Products

	ALF08N16V	ALF08N20V
Description	Power Field-Effect Transistor, 8A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3	Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	HIGH VOLTAGE	HIGH VOLTAGE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	160 V	200 V
Maximum drain current (ID)	8 A	8 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247	TO-247
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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