BAT 70-05
Silicon Schottky Diodes
•
Parallel connection for maximum
I
F
per package
•
Low forward voltage drop
•
For power supply
•
For clamping and protection
4
3
2
1
VPS05163
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BAT 70-05
Marking
BAT 70-05
Ordering Code Pin Configuration
Q62702-A1223
1 = A1 2 n.c.
Package
3 = A2 4=C1/C2 SOT-223
Maximum Ratings
Parameter
Reverse voltage,
T
S
< 75°C
1)
Reverse voltage,
T
S
< 50°C
1)
Peak reverse voltage,
T
S
< 70°C, t < 10ms
2)
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current (t< 100µs)
Total power dissipation,
T
S
≤
130 °C
Symbol
Value
50
70
70
1.5
1.5
5
1.5
3
150
- 65 ...+150
°C
W
A
Unit
V
V
R
V
R
V
RM
I
F
I
FAV
I
FSM
P
tot
Total power dissipation, both diodes,
T
S
≤
120 °C
P
tot
Junction temperature
T
j
Storage temperature
T
stg
1)
Maximum Ratings
Junction - ambient
R
thJA
R
thJS
≤
82
≤12
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
2) see DC/pulse derating curve
V
R
=
f
(T
A
)
Semiconductor Group
Semiconductor Group
1
1
Jun-02-1998
1998-11-01
BAT 70-05
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
DC characteristics
Reverse current
Symbol
min.
Values
typ.
max.
µA
-
-
10
60
1
100
1000
15
mA
V
-
-
-
-
0.2
0.26
0.33
0.52
-
-
-
0.6
Unit
I
R
V
R
= 50 V
V
R
= 70 V
Reverse current
I
R
V
F
-
V
R
= 50 V,
T
A
= 75 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1.5 A
AC characteristics
Diode capacitance
C
T
-
-
236
48.8
-
-
pF
V
R
= 0 V,
f
= 1 MHz
V
R
= 10 V,
f
= 1 MHz
Forward voltage
V
F
=
f
(T
A
)
for
t
p = 10ms and 100ms, Duty cycle
< 1/100
80
V
V
R
60
50
40
30
20
t
p
=DC
t
p
=100ms
t
p
=10ms
10
0
0
20
40
60
80
100
120
°C
150
T
A
Semiconductor Group
Semiconductor Group
2
2
Jun-02-1998
1998-11-01
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