SRAS830C0 datasheet, PDF - EEWORLD Datasheet

SRAS830C0: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, TO-263AB, D2PAK-3/2; CategoryDiscrete semiconductor diode; File Size205KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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SRAS830C0 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 30V V(RRM), Silicon, TO-263AB, D2PAK-3/2

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	D2PAK-3/2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	100 µA
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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