Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417B series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process.
Break-before-make is guaranteed for the DG419B, which is
an SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
FEATURES
•
•
•
•
•
± 15 V Analog Signal Range
On-Resistance - r
DS(on)
: 15
Ω
Fast Switching Action - t
ON
: 110 ns
TTL and CMOS Compatible
MSOP-8 and SOIC-8 Package
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
•
•
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
APPLICATIONS
•
•
•
•
•
•
•
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control Systems
Hard Disk Drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S
NC
GND
V+
1
2
3
4
Top View
8
7
6
5
D
V-
IN
V
L
TRUTH TABLE
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
DG417B
ON
OFF
DG418B
OFF
ON
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
D
S
1
GND
V+
1
2
3
4
Top View
8
7
6
5
S
2
V-
IN
V
L
TRUTH TABLE - DG419B
Logic
0
1
Logic "0"
≤
0.8 V
Logic "1"
≥
2.4 V
SW
1
ON
OFF
SW
2
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72107
S-71009–Rev. C, 14-May-07
www.vishay.com
1
DG417B/418B/419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417B/418B
Package
Part Number
DG417BDJ
DG417BDJ-E3
DG418BDJ
DG418BDJ-E3
DG417BDY
DG417BDY-E3
DG417BDY-T1
DG417BDY-T1-E3
DG418BDY
DG418BDY-E3
DG418BDY-T1
DG418BDY-T1-E3
DG417BDQ-T1-E3
DG418BDQ-T1-E3
DG419BDJ
DG419BDJ-E3
DG419BDY
DG419BDY-E3
DG419BDY-T1
DG419BDY-T1-E3
DG419BDQ-T1-E3
8-Pin Plastic MiniDIP
- 40 to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
DG419B
8-Pin Plastic MiniDIP
- 40 to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
ABSOLUTE MAXIMUM RATINGS
Parameter
V-
V+
GND
V
L
Digital Inputs
a
, V
S
, V
D
Current, (Any Terminal) Continuous
Current (S or D) Pulsed at 1 ms, 10 % duty cycle
Storage Temperature
8-Pin Plastic MiniDIP
c
Power Dissipation (Package)
b
8-Pin Narrow SOIC
8-Pin MSOP
d
c
Limit
- 20
20
25
(GND - 0.3 V) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
400
400
400
600
Unit
V
mA
°C
mW
8-Pin CerDIP
e
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.3 mW/°C above 75 °C.
d. Derate 4 mW/°C above 70 °C.
e. Derate 8 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V-
V
IN
Level
Shift/
Drive
V+
GND
D
V-
Figure 1.
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Symbol
V
ANALOG
r
DS(on)
I
S(off)
Switch Off Leakage Current
I
D(off)
V+ = 16.5, V- = - 16.5 V
DG417B
V
D
=
±
15.5 V, V
S
=
±
15.5 V DG418B
DG419B
DG417B
DG418B
DG419B
I
S
= - 10 mA, V
D
=
±
12.5 V
V+ = 13.5 V, V- = - 13.5 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
±
10 V, See Switching
Time Test Circuit
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
=
±
10 V, V
S2
=
±
10 V
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
=
±
10 V
DG417B
DG418B
DG417B
DG418B
DG419B
DG419B
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
15
Typ
c
A Suffix
- 55 to 125 °C
Min
d
- 15
Max
d
15
25
34
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.75
- 60
- 0.5
- 0.5
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
0.5
0.5
89
106
80
88
87
96
3
3
pC
- 0.25
-5
- 0.25
-5
- 0.75
- 12
- 0.4
- 10
- 0.75
- 12
- 0.5
- 0.5
D Suffix
- 40 to 85 °C
Min
d
- 15
Max
d
15
25
29
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
0.5
0.5
89
99
80
86
87
93
ns
Unit
V
Ω
-
0.1
-
0.1
-
0.1
-
0.4
-
0.4
nA
Channel On Leakage Current
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation
e
Channel-to-Channel
Crosstalk
e
I
D(on)
V+ = 16.5 V, V- = - 16.5 V
V
S
= V
D
=
±
15.5 V
I
IL
I
IH
t
ON
t
OFF
t
TRANS
t
D
Q
OIRR
X
TALK
µA
62
53
60
16
4
- 86
C
L
= 10 nF
V
gen
= 0 V, R
gen
= 0
Ω
R
L
= 50
Ω,
C
L
= 5 pF,
f = 1 MHz
DG419B
dB
- 87
Document Number: 72107
S-71009–Rev. C, 14-May-07
www.vishay.com
3
DG417B/418B/419B
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
V+ = 16.5 V, V- = - 16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
Room
Full
0.001
- 0.001
0.001
- 0.001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
Symbol
C
S(off)
C
D(off)
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
f = 1 MHz, V
S
= 0 V
DG417B
DG418B
DG417B
DG418B
DG419B
Temp
b
Room
Room
Room
Room
Typ
c
12
12
pF
50
57
A Suffix
- 55 to 125 °C
Min
d
Max
d
D Suffix
- 40 to 85 °C
Min
d
Max
d
Unit
C
D(on)
f = 1 MHz, V
S
= 0 V
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Transition Time
Charge Injection
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
V+ = 13.2 V, V
L
= 5.25 V
V
IN
= 0 or 5 V
Room
Full
Room
Room
Room
0.001
- 0.001
0.001
- 0.001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
µA
t
ON
t
OFF
t
D
t
TRANS
Q
R
L
= 300
Ω,
C
L
= 35 pF
V
S
=
8
V, See Switching
Time Test Circuit
R
L
= 300
Ω,
C
L
= 35 pF
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= 0 V, 8 V, V
S2
=
8
V, 0 V
C
L
= 10 nF, V
gen
= 0 V, R
gen
= 0
Ω
Room
Full
Room
Full
DG419B Room
Room
Full
Room
100
38
62
95
3
25
119
153
125
155
66
73
25
119
141
pC
125
143
66
69
Symbol
V
ANALOG
r
DS(on)
I
S
= - 10 mA, V
D
=
3.8
V
V+ = 10.8 V,
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Full
Room
Full
26
Typ
c
A Suffix
- 55 to 125 °C
Min
d
0
Max
d
12
35
52
D Suffix
- 40 to 85 °C
Min
d
0
Max
d
12
35
45
Unit
V
Ω
ns
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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