SPANSION Flash Memory
Data Sheet
TM
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
revisions will occur when appropriate, and changes will be noted in a revision summary.
TM
product. Future routine
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20868-4E
FLASH MEMORY
CMOS
2M (256K
×
8) BIT
MBM29F002TC
-55/-70/-90
/MBM29F002BC
-55/-70/-90
s
GENERAL DESCRIPTION
The MBM29F002TC/BC is a 2 M-bit, 5.0 V-Only Flash memory organized as 256K bytes of 8 bits each. The
MBM29F002TC/BC is offered in a 32-pin TSOP(1) and 32-pin PLCC packages. This device is designed to be
programmed in-system with the standard system 5.0 V V
CC
supply. A 12.0 V V
PP
is not required for program or
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F002TC/BC offers access times between 55 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F002TC/BC is command set compatible with JEDEC standard E
2
PROMs. Commands are written to
the command register using standard microprocessor write timings. Register contents serve as input to an internal
state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the device is similar to reading
from 12.0 V Flash or EPROM devices.
The MBM29F002TC/BC is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is
accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which
is an internal algorithm that automatically preprograms the array if it is not already programmed before executing
the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell
margin.
s
PRODUCT LINE UP
Part No.
V
CC
= 5.0 V ± 5%
Ordering Part No.
V
CC
= 5.0 V ± 10%
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
—
55
55
30
-70
70
70
30
-90
90
90
35
-55
MBM29F002TC/BC
—
—
MBM29F002TC
-55/-70/-90
/MBM29F002BC
-55/-70/-90
(Continued)
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1
second (if already completely preprogrammed). The MBM29F002TC/BC is erased when shipped from the
factory.
The MBM29F002TC/BC device also features hardware sector protection. This feature will disable both program
and erase operations in any number of secotrs (0 through 6).
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ
7
, or by the Toggle Bit I feature on DQ
6
. Once the end of a program or erase cycle has been completed, the
device automatically resets to the read mode.
The MBM29F002TC/BC also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29F002TC/BC memory electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the
EPROM programming mechanism of hot electron injection.
s
FEATURES
•
•
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
32-pin TSOP(1) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)
32-pin PLCC (Package Suffix: PD)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes
Any combination of sectors can be erased. Also supports full chip erase
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase™* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program™* Algorithms
Automatically programs and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
•
•
•
•
•
•
•
•
(Continued)
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