The DG2517, DG2518 are low-voltage dual single-pole/
double-throw monolithic CMOS analog switches. Designed
to operate from 1.8 V to 5.5 V power supply, the DG2517,
DG2518 achieves a bandwidth of 242 MHz while providing
low on-resistance (3
Ω),
excellent on-resistance matching
(0.2
Ω)
and flatness (1
Ω)
over the entire signal range.
The DG2517, DG2518 offers the advantage of high linearity
that reduces signal distortion, making ideal for audio, video,
and USB signal routing applications. Additionally, the
DG2517, DG2518 are 1.6 V logic compatible within the full
operation voltage range.
Built on Vishay Siliconix’s proprietary sub-micron high-
density process, the DG2517, DG2518 brings low power
consumption at the same time as reduces PCB spacing with
the MSOP10 and DFN10 packages.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. The DFN
package has a nickel-palladium-gold device termination and
is represented by the lead (Pb)-free "-E4" suffix. The MSOP
package uses 100 % matte Tin device termination and is
represented by the lead (Pb)- free "-E3" suffix. Both the
matte Tin and nickel-palladium-gold device terminations
meet all JEDEC standards for reflow and MSL ratings.
FEATURES
• 1.8 V to 5.5 V single supply operation
• Low R
ON
: 3
Ω
at 4.2 V
• 242 MHz, - 3 dB bandwidth
•
Low off-isolation, - 51 dB at 10 MHz
• + 1.6 V logic compatible
RoHS
COMPLIANT
BENEFITS
•
•
•
•
High linearity
Low power consumption
High bandwidth
Full rail signal swing range
APPLICATIONS
•
•
•
•
•
•
•
USB/UART signal switching
Audio/video switching
Cellular phone
Media players
Modems
Hard drives
PCMCIA
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2517
IN1
NO1
GND
NO2
IN2
1
2
3
4
5
Top View
10
9
8
7
6
COM1
NC1
V+
NC2
COM2
TRUTH TABLE
Logic
0
1
NC1 and NC2
ON
OFF
NO1 and NO2
OFF
ON
DG2518
IN1
NC1
GND
NC2
IN2
1
2
3
4
5
Top View
10
9
8
7
6
COM1
NO1
V+
ORDERING INFORMATION
Temp. Range
Package
MSOP-10
Part Number
DG2517DQ-T1-E3
DG2518DQ-T1-E3
DG2517DN-T1-E4
DG2518DN-T1-E4
NO2
COM2
- 40 °C to 85 °C
DFN-10
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
www.vishay.com
1
DG2517, DG2518
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference to GND
V+
IN, COM, NC, NO
a
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
MSOP-10
DFN-10
d
c
Limit
- 0.3 to + 6
- 0.3 to (V+ + 0.3)
± 50
± 200
- 65 to 150
320
1191
Unit
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
SPECIFICATIONS
(V+ = 3 V)
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match Between Channels
Switch Off Leakage Current
f
Symbol
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
ΔR
ON
I
NO(off),
I
NC(off)
I
COM(off)
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp.
a
Full
Limits
- 40 °C to 85 °C
Typ.
c
Max.
b
Min.
b
0
3.2
1.0
0.1
-1
- 10
-1
- 10
-1
- 10
1.4
0.5
4
1
15
10
1
1
242
- 71
- 51
- 73
- 55
8
8
35
35
1
30
50
25
35
V+
4.5
5.0
1.4
16
0.3
0.4
1
10
1
10
1
10
Unit
V
V+ = 2.7 V, V
COM
= 1.5 V
I
NO/NC
= 10 mA
V+ = 2.7 V, V
COM
= 1.5, 2 V
I
NO/NC
= 10 mA
V+ = 2.7 V, V
COM
= 1.5 V
I
NO/NC
= 10 mA
V+ = 3.6 V, V
NO
, V
NC
= 0.3 V/ 3 V
V
COM
= 3 V/0.3 V
V+ = 3.6 V, V
NO,
V
NC
= V
COM
= 0.3 V/3 V
Channel-On Leakage Current
f
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
- 3 dB Bandwidth
Off-Isolation
d
Crosstalk
d
N
O
, N
C
Off Capacitance
d
Channel-On Capacitance
d
I
COM(on)
V
INH
V
INL
C
in
I
INL
or I
INH
t
ON
t
OFF
t
d
Q
INJ
BW
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
Full
Full
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Ω
nA
V
pF
µA
V+ = 2.7 V, V
NO
or V
NC
= 1.5 V
R
L
= 300
Ω,
C
L
= 35 pF
V
NO
or V
NC
= 1.5 V, R
L
= 300
Ω,
C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 1.5 V, R
GEN
= 0
Ω
0 dBm, C
L
= 5 pF, R
L
= 50
Ω
f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF
f = 10 MHz
f = 1 MHz
R
L
= 50
Ω,
C
L
= 5 pF
f = 10 MHz
ns
pC
MHz
dB
V
IN
= 0 or V+, f = 1 MHz
pF
Power Supply
I+
Full
0.01
1.0
µA
Power Supply Current
V
IN
= 0 or V+
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
www.vishay.com
2
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
DG2517, DG2518
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
On-Resistance
R
ON
Flatness
R
ON
Match Between Channels
V
NO
, V
NC
,
V
COM
R
ON
R
ON
Flatness
ΔR
ON
I
NO(off),
I
NC(off)
I
COM(off)
Channel-On Leakage Current
Digital Control
Input High Voltage
d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
d
- 3 dB Bandwidth
Off-Isolation
d
Crosstalk
d
Source-Off Capacitance
d
Channel-On Capacitance
d
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V
IN
= 0 or V+
Full
1.8
0.01
5.5
1.0
V
µA
t
ON
t
OFF
t
d
Q
INJ
BW
OIRR
X
TALK
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V
IN
= 0 or V+, f = 1 MHz
V+ = 4.2 V, V
NO
or V
NC
= 3 V
R
L
= 300
Ω,
C
L
= 35 pF
V
NO
or V
NC
= 3 V, R
L
= 300
Ω,
C
L
= 35 pF
C
L
= 1 nF, V
GEN
= 2.5 V, R
GEN
= 0
Ω
0 dBm, C
L
= 5 pF, R
L
= 50
Ω
R
L
= 50
Ω,
C
L
= 5 pF
R
L
= 50
Ω,
C
L
= 5 pF
f = 1 MHz
f = 10 MHz
f = 1 MHz
f = 10 MHz
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
1
2
242
- 71
- 51
- 73
- 55
8
8
35
35
pF
dB
pC
MHz
12
8
25
45
20
30
ns
V
INH
V
INL
C
in
I
INL
or I
INH
V
IN
= 0 V or V+
Full
Full
Full
Full
1
4
1
2.0
0.8
V
pF
µA
I
COM(on)
V+ = 4.2 V, V
COM
= 3.5 V, I
NO/NC
= 10 mA
V+ = 4.2 V, V
COM
= 1, 2, 3.5 V
I
NO/NC
= 10 mA
V+ = 4.2 V, V
COM
= 3.5 V, I
NO/NC
= 10 mA
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
-1
- 10
-1
- 10
-1
- 10
0
3
1.1
0.1
V+
4.0
4.3
1.4
1.6
0.3
0.4
1
10
1
10
1
10
nA
Ω
V
Symbol
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.0 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Min.
b
Typ.
c
Max.
b
Unit
Switch Off Leakage Current
V+ = 5.5 V
V
NO
, V
NC
= 1 V/4.5 V, V
COM
= 4.5 V/1 V
V+ = 5.5 V, V
COM
= V
NO
, V
NC
= 1 V/4.5 V
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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