IRFY9130-JQR-BR1 datasheet, PDF

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IRFY9130-JQR-BR1: Description9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size14KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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IRFY9130-JQR-BR1 Overview

9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN

IRFY9130-JQR-BR1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-220M
package instruction	FLANGE MOUNT, R-MSFM-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	9.3 A
Maximum drain-source on-resistance	0.36 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	37 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IRFY9130

MECHANICAL DATA

Dimensions in mm (inches)

4.70

5.00

0.70

0.90

3.56

Dia.

3.81

10.41

10.67

P–CHANNEL

POWER MOSFET

FOR HI–REL

APPLICATIONS

V

DSS

I

D(cont)

R

DS(on)

FEATURES

0.89

1.14

16.38

16.89

13.39

13.64

1 2 3

12.70

19.05

-100V

-9.3A

Ω

0.31Ω

10.41

10.92

2.54

BSC

2.65

2.75

• HERMETICALLY SEALED TO–220 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

TO–220M – Metal Package

Pad 1 – Gate

Pad 2 – Drain

Pad 3 – Source

• LIGHTWEIGHT

• SCREENING OPTIONS AVAILABLE

• ALL LEADS ISOLATED FROM CASE

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

GS

I

D

I

D

I

DM

P

D

T

J

, T

stg

R

θJC

R

θJA

Gate – Source Voltage

Continuous Drain Current @ T

case

= 25°C

Continuous Drain Current @ T

case

= 100°C

Pulsed Drain Current

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

±20V

-9.3A

-5.8A

-37A

45W

0.36W/°C

–55 to 150°C

2.8°C/W max.

80°C/W max.

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 4/97

IRFY9130-JQR-BR1 Related Products

	IRFY9130-JQR-BR1	IRFY9130-QR-BR1
Description	9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN	9.3A, 100V, 0.36ohm, P-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	SEMELAB	SEMELAB
Parts packaging code	TO-220M	TO-220M
package instruction	FLANGE MOUNT, R-MSFM-T3	FLANGE MOUNT, R-MSFM-T3
Contacts	3	3
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	9.3 A	9.3 A
Maximum drain-source on-resistance	0.36 Ω	0.36 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-T3	R-MSFM-T3
JESD-609 code	e1	e1
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	37 A	37 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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