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K8S6615EBD-HE7E0

Description
Flash, 4MX16, 70ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-44
Categorystorage    storage   
File Size1MB,48 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K8S6615EBD-HE7E0 Overview

Flash, 4MX16, 70ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, HALOGEN FREE AND LEAD FREE, FBGA-44

K8S6615EBD-HE7E0 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA,
Contacts44
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
JESD-30 codeR-PBGA-B44
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals44
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Programming voltage1.8 V
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
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