Flash, 4MX16, 80ns, FBGA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | BGA |
| package instruction | BGA, |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum access time | 80 ns |
| Other features | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
| JESD-30 code | X-PBGA-B |
| JESD-609 code | e0 |
| memory density | 67108864 bi |
| Memory IC Type | FLASH |
| memory width | 16 |
| Humidity sensitivity level | 3 |
| Number of functions | 1 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -25 °C |
| organize | 4MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | BGA |
| Package shape | UNSPECIFIED |
| Package form | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Programming voltage | 1.8 V |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | TIN LEAD |
| Terminal form | BALL |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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