K6T4008S1C-MF10 datasheet, PDF

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K6T4008S1C-MF10: DescriptionStandard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32; Categorystorage storage; File Size164KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6T4008S1C-MF10 Overview

Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32

K6T4008S1C-MF10 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2-R,
Contacts	32
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	100 ns
JESD-30 code	R-PDSO-G32
length	20.95 mm
memory density	4194304 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2-R
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	10.16 mm

K6T4008S1C-MF10 Preview

K6T4008S1C Family

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

CMOS SRAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Finalize

Draft Data

June 15, 1998

April 17, 1999

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

1

Revision 1.0

April 1999

K6T4008S1C Family

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

FEATURES

•

Process Technology: TFT

•

Organization: 512K×8

•

Power Supply Voltage

K6T4008S1C Family: 2.3~2.7V

•

Low Data Retention Voltage: 2V(Min)

•

Three state output and TTL Compatible

•

Package Type: 32-TSOP2-400F/R

32-TSOP1-0820F, 32-TSOP1-0813.4F

CMOS SRAM

GENERAL DESCRIPTION

The K6T4008S1C families are fabricated by SAMSUNG′s

advanced CMOS process technology. The families support

industrial operating temperature range and have various

package type for user flexibility of system design. The fami-

lies also support low data retention voltage for battery back-

up operation with low data retention current.

PRODUCT FAMILY

Power Dissipation

Product Family

Operating Temperature

Vcc Range

Speed

Standby

(I

SB1

, Max)

15µA

Operating

(I

CC2

, Max)

16mA

PKG Type

32-TSOP2-F/R

32-TSOP1-F

32-sTSOP1-F

K6T4008S1C-F

Industrial(-40~85°C)

2.3~2.7V

100*/120ns

1. The paramerter is measured with 30pF test load.

PIN DESCRIPTION

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

VSS

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

VCC

A15

A17

WE

A13

A8

A9

A11

OE

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

VCC

A15

A17

WE

A13

A8

A9

A11

OE

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

VSS

FUNCTIONAL BLOCK DIAGRAM

Clk gen.

Precharge circuit.

A0

A1

A4

A5

A6

A7

A12

A14

A16

A18

32-TSOP2

(Forward)

32-TSOP2

(Reverse)

Row

select

Memory array

1024 rows

512×8 columns

A11

A9

A8

A13

WE

A17

A15

VCC

A18

A16

A14

A12

A7

A6

A5

A4

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32-TSOP1

32-

S

TSOP1

(Forward)

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

OE

A10

CS

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

A0

A1

A2

A3

I/O

1

I/O

8

Data

cont

I/O Circuit

Column select

Data

cont

A2 A3 A8 A9 A10 A11 A13 A15 A17

Name

Function

Name

Vcc

Vss

Function

Power

Ground

CS

WE

OE

A

0

~A

18

Address Inputs

WE

CS

OE

Write Enable Input

Chip Select Input

Output Enable Input

Control

logic

I/O

1

~I/O

8

Data Inputs/Outputs

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to change products and specifications without notice.

2

Revision 1.0

April 1999

K6T4008S1C Family

PRODUCT LIST

Industrial Temp Products(-40~85°C)

Part Name

K6T4008S1C-VF10

K6T4008S1C-VF12

K6T4008S1C-MF10

K6T4008S1C-MF12

K6T4008S1C-TF10

K6T4008S1C-TF12

K6T4008S1C-YF10

K6T4008S1C-YF12

Function

CMOS SRAM

32-TSOP2-F, 100ns, 2.5V, LL

32-TSOP2-F, 120ns, 2.5V, LL

32-TSOP2-R, 100ns, 2.5V, LL

32-TSOP2-R, 120ns, 2.5V, LL

32-TSOP1-F, 100ns, 2.5V, LL

32-TSOP1-F, 120ns, 2.5V, LL

32-sTSOP1-F, 100ns, 2.5V, LL

32-sTSOP1-F, 120ns, 2.5V, LL

FUNCTIONAL DESCRIPTION

CS

H

L

OE

X

1)

H

L

X

1)

WE

X

1)

H

L

I/O

High-Z

Dout

Din

Mode

Deselected

Output Disabled

Read

Write

Power

Standby

Active

1. X means don′t care (Must be in low or high state)

ABSOLUTE MAXIMUM RATINGS

1)

Item

Voltage on any pin relative to Vss

Voltage on Vcc supply relative to Vss

Power Dissipation

Storage temperature

Operating Temperature

Symbol

V

IN

,V

OUT

V

CC

P

D

T

STG

T

A

Ratings

-0.5 to V

CC

+0.5

-0.3 to 4.6

1.0

-65 to 150

-40 to 85

Unit

V

W

°C

Remark

-

Industrial Product

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be

restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

3

Revision 1.0

April 1999

K6T4008S1C Family

RECOMMENDED DC OPERATING CONDITIONS

1)

Item

Supply voltage

Ground

Input high voltage

Input low voltage

Symbol

Vcc

Vss

V

IH

V

IL

Product

K6T4008S1C Family

All Family

Min

2.3

0

2.0

-0.3

3)

Typ

2.5

0

-

CMOS SRAM

Max

2.7

0

Vcc+0.3

2)

0.6

Unit

V

Note:

1. T

A

=-40 to 85°C, otherwise specified

2. Overshoot : V

CC

+1.0V in case of pulse width

≤

20ns

3. Undershoot : -1.0V in case of pulse width

≤

20ns

4. Overshoot and undershoot are sampled, not 100% tested.

CAPACITANCE

1)

(f=1MHz, T

A

=25°C)

Item

Input capacitance

Input/Output capacitance

1. Capacitance is sampled, not 100% tested

Symbol

C

IN

C

IO

Test Condition

V

IN

=0V

V

IO

=0V

Min

-

Max

8

10

Unit

pF

DC AND OPERATING CHARACTERISTICS

Item

Input leakage current

Output leakage current

Operating power supply current

Average operating current

Output low voltage

Output high voltage

Standby Current(TTL)

Standby Current (CMOS)

Symbol

I

LI

I

LO

I

CC

I

CC1

I

CC2

V

OL

V

OH

I

SB

I

SB1

V

IN

=Vss to Vcc

CS=V

IH

or OE=V

IH

or WE=V

IL

V

IO

=Vss to Vcc

I

IO

=0mA, CS=V

IL

, V

IN

=V

IL

or V

IH

, read

Cycle time=1µs, 100% duty, I

IO

=0mA CS≤0.2V,V

IN

≤0.2V

or V

IN

≥Vcc-0.2V

Test Conditions

Min

-1

-

2.0

-

Typ

-

Max

1

3

16

0.4

-

0.3

15

Unit

µA

mA

V

mA

µA

Cycle time=Min, 100% duty, I

IO

=0mA, CS=V

IL

, V

IN

=V

IH

or V

IL

I

OL

=0.5mA

I

OH

=-0.5mA

CS=V

IH

, Other inputs = V

IL

or V

IH

CS≥Vcc-0.2V, Other inputs=0~Vcc

4

Revision 1.0

April 1999

K6T4008S1C Family

AC OPERATING CONDITIONS

TEST CONDITIONS

(Test Load and Input/Output Reference)

Input pulse level : 0.4 to 2.2V

Input rising and falling time : 5ns

Input and output reference voltage : 1.1V

Output load(see right) : C

L

=100pF+1TTL

C

L

=30pF

1)

+1TTL

1. K6T4008S1C-10 Family

CMOS SRAM

C

L

1)

1. Including scope and jig capacitance

AC CHARACTERISTICS

(V

CC

=2.3~2.7V, T

A

=-40 to 85°C)

Speed Bins

Parameter List

Symbol

100ns

Min

Read cycle time

Address access time

Chip select to output

Output enable to valid output

Read

Chip select to low-Z output

Output enable to low-Z output

Chip disable to high-Z output

Output disable to high-Z output

Output hold from address change

Write cycle time

Chip select to end of write

Address set-up time

Address valid to end of write

Write

Write pulse width

Write recovery time

Write to output high-Z

Data to write time overlap

Data hold from write time

End write to output low-Z

t

RC

t

AA

t

CO

t

OE

t

LZ

t

OLZ

t

HZ

t

OHZ

t

OH

t

WC

t

CW

t

AS

t

AW

t

WP

t

WR

t

WHZ

t

DW

t

DH

t

OW

100

-

10

5

0

15

100

80

0

80

70

0

40

0

5

Max

-

100

50

-

30

-

30

-

Min

120

-

10

5

0

15

120

100

0

100

80

0

50

0

5

120ns

Max

-

120

60

-

35

-

35

-

ns

Units

DATA RETENTION CHARACTERISTICS

Item

Vcc for data retention

Data retention current

Data retention set-up time

Recovery time

Symbol

V

DR

I

DR

t

SDR

t

RDR

Test Condition

CS≥Vcc-0.2V

Vcc=2.5V, CS≥Vcc-0.2V

See data retention waveform

Min

2.0

-

0

5

Typ

-

0.5

-

Max

3.6

15

-

Unit

V

µA

ms

5

Revision 1.0

April 1999

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K6T4008S1C-MF10 Related Products

	K6T4008S1C-MF10	K6T4008S1C-YF10	K6T4008S1C-VF12	K6T4008S1C-TF10	K6T4008S1C-TF12	K6T4008S1C-VF10	K6T4008S1C-YF12	K6T4008S1C-MF12
Description	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	TSOP1	TSOP2	TSOP1	TSOP1	TSOP2	TSOP1	TSOP2
package instruction	TSOP2-R,	TSOP1,	TSOP2,	TSOP1,	TSOP1,	TSOP2,	TSOP1,	TSOP2-R,
Contacts	32	32	32	32	32	32	32	32
Reach Compliance Code	unknow	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	100 ns	100 ns	120 ns	100 ns	120 ns	100 ns	120 ns	120 ns
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
length	20.95 mm	11.8 mm	20.95 mm	18.4 mm	18.4 mm	20.95 mm	11.8 mm	20.95 mm
memory density	4194304 bi	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2-R	TSOP1	TSOP2	TSOP1	TSOP1	TSOP2	TSOP1	TSOP2-R
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	1.27 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	1.27 mm	0.5 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	10.16 mm	8 mm	10.16 mm	8 mm	8 mm	10.16 mm	8 mm	10.16 mm

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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