RFP2P08 datasheet, PDF - EEWORLD Datasheet

RFP2P08: Description2A, 80V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size851KB，5 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/

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RFP2P08 Overview

2A, 80V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Rochester Electronics
Reach Compliance Code	unknow
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	5 A
Certification status	COMMERCIAL
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	RFP2P08	RFP2P10
Description	2A, 80V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	2A, 100V, 3.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Rochester Electronics	Rochester Electronics
Reach Compliance Code	unknow	unknow
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V	100 V
Maximum drain current (ID)	2 A	2 A
Maximum drain-source on-resistance	3.5 Ω	3.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Humidity sensitivity level	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	5 A	5 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	NO	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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