Composite Transistors
UP0187B
Silicon N-channel MOSFET
For switching circuits
Features
High-speed switching
Incorporating a built-in gate protection-diode
Two elements incorporated into one package
SSMini type package, reduction of the mounting area and assembly cost
(0.30)
5
4
1.20
±0.05
1.60
±0.05
0.20
–0.02
+0.05
Unit: mm
0.10
±0.02
1
1.00
±0.05
Basic Part Number
2SK3938
×
2
1.60
±0.05
Display at No.1 lead
(0.20)
2
3
(0.50) (0.50)
5°
0.55
±0.05
5°
(0.20)
Absolute Maximum Ratings
T
a
=
25
°C
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
V
DSS
V
GSS
I
D
I
DP
P
T
T
ch
T
stg
30
±12
100
200
125
125
–55 to +125
V
V
mA
mA
mW
°C
°C
1: Gate (FET1)
2: Source
3: Gate (FET2)
0 to 0.02
Parameter
Symbol
Rating
Unit
4: Drain (FET2)
5: Drain (FET1)
SSMini5-F2 Package
Marking Symbol:
4M
Internal Connection
5
4
Electrical Characteristics
T
a
=
25
°C±3°C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on time
*
Turn-off time
*
Symbol
V
DSS
I
DSS
I
GSS
V
TH
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
V
DD
=
3
V, V
GS
=
0
V to
3
V,
I
D
=
10
mA
V
DD
=
3
V, V
GS
=
3
V to
0
V,
I
D
=
10
mA
V
DS
=
3
V, V
GS
=
0,
f =
1
MHz
Conditions
I
D
=
10
µA,
V
GS
=
0
V
DS
=
20
V, V
GS
=
0
V
GS
=
±10
V, V
DS
=
0
10
I
D
=
1.0
µA,
V
DS
=
3.0
V
A,
I
D
=
10
mA, V
GS
=
2.5
V
I
D
=
10
mA, V
GS
=
4.0
V
I
D
=
10
mA, V
DS
=
3
V, f =
1
kHz
20
0.5
Min
30
1
2
3
Typ
Max
1.0
±10
0.10 max
Unit
V
µA
µA
V
Ω
mS
pF
pF
pF
ns
ns
1.0
7
5
55
12
10
6
350
350
1.5
12
8
Publication date: June
2005
SJJ00331AED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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