Field Stop Trench IGBT
650 V, 75 A
AFGHL75T65SQD
Using the novel field stop 4th generation high speed IGBT
technology. AFGHL75T65SQD which is AEC Q101 qualified offers
the optimum performance for both hard and soft switching topology in
automotive application.
Features
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AEC−Q101 Qualified
Maximum Junction Temperature: T
J
= 175°C
Positive Temperature Co−efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: V
CE(Sat)
= 1.6 V (Typ.) @ I
C
= 75 A
100% of the Parts are Tested for I
LM
(Note 2)
Fast Switching
Tight Parameter Distribution
RoHS Compliant
75 A, 650 V
V
CESat
= 1.6 V
C
G
E
Typical Applications
•
Automotive HEV−EV Onboard Chargers
•
Automotive HEV−EV DC−DC Converters
•
Totem Pole Bridgeless PFC
MAXIMUM RATINGS
Rating
Collector−to−Emitter Voltage
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
Collector Current (Note 1)
@ T
C
= 25°C
@ T
C
= 100°C
Symbol Value
V
CES
V
GES
I
C
I
LM
I
CM
I
F
I
FM(2)
P
D
T
J
,
T
STG
T
L
650
±20
±30
80
75
300
300
80
50
300
375
188
−55
to
+175
300
Unit
V
V
A
A
A
A
A
W
°C
°C
&Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= 3−Digit Data Code
&K
= 2−Digit Lot Traceability Code
AFGHL75T65SQD = Specific Device Code
&Y&Z&3&K
AFGHL
75T65SQD
G
C
E
TO−247−3L
CASE 340CX
MARKING DIAGRAM
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current
@ T
C =
25°C
@ T
C =
100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation @ T
C
= 25°C
@ T
C
= 100°C
Operating Junction
/ Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V
CC
= 400 V, V
GE
= 15 V, I
C
= 300 A, R
G
= 15
W,
Inductive Load
3. Repetitive Rating: pulse width limited by max. Junction temperature
ORDERING INFORMATION
Device
AFGHL75T65SQD
Package
TO−247−3L
Shipping
30 Units / Rail
©
Semiconductor Components Industries, LLC, 2019
October, 2019
−
Rev. 0
1
Publication Order Number:
AFGHL75T65SQD/D
AFGHL75T65SQD
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJC
R
qJA
Value
0.4
0.65
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Temperature Coefficient of Breakdown
Voltage
Collector−emitter cut−off current,
gate−emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
ON CHARACTERISTICS
Gate−emitter threshold voltage
Collector−emitter saturation voltage
DYNAMIC CHARACTERISTICS
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate−to−emitter charge
Gate−to−collector charge
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
T
C
= 25°C,
V
CC
= 400 V,
I
C
= 75 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load
T
C
= 25°C,
V
CC
= 400 V,
I
C
= 37.5 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
−
−
−
−
−
−
−
−
−
−
−
−
−
−
23
17
112
8
0.61
0.21
0.82
25
46
106
67
1.86
1.13
2.99
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
mJ
ns
V
CE
= 400 V,
I
C
= 75 A,
V
GE
= 15 V
V
CE
= 30 V,
V
GE
= 0 V,
f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
−
−
−
4617
152
13
136
25
32
−
−
−
−
−
−
nC
pF
V
GE
= V
CE
, I
C
= 75 mA
V
GE
= 15 V, I
C
= 75 A
V
GE
= 15 V, I
C
= 75 A, T
J
= 175°C
V
GE(th)
V
CE(sat)
3.4
−
−
4.9
1.6
1.95
6.4
2.1
−
V
V
V
GE
= 0 V,
I
C
= 1 mA
V
GE
= 0 V,
I
C
= 1 mA
V
GE
= 0 V,
V
CE
= 650 V
V
GE
= 20 V,
V
CE
= 0 V
BV
CES
DBV
CES
DT
J
I
CES
I
GES
650
−
−
0.6
−
−
V
V/°C
Test Conditions
Symbol
Min
Typ
Max
Unit
−
−
−
−
250
±400
mA
nA
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AFGHL75T65SQD
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
Diode Forward Voltage
I
F
= 50 A, T
C
= 25°C
I
F
= 50 A, T
C
= 175°C
Reverse Recovery Energy
Diode Reverse Recovery Time
I
F
= 50 A, dI
F
/dt = 200 A/s, T
C
= 175°C
I
F
= 50 A, dI
F
/dt = 200 A/s, T
C
= 25°C
I
F
= 50 A, dI
F
/dt = 200 A/s, T
C
= 175°C
Diode Reverse Recovery Charge
I
F
= 50 A, dI
F
/dt = 200 A/s, T
C
= 25°C
I
F
= 50 A, dI
F
/dt = 200 A/s, T
C
= 175°C
Q
rr
E
rec
T
rr
V
FM
−
−
−
−
−
−
−
2.0
1.64
52
36
200
54
954
2.6
−
−
−
−
−
−
nC
mJ
ns
V
T
C
= 175°C,
V
CC
= 400 V,
I
C
= 75 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load
T
C
= 175°C,
V
CC
= 400 V,
I
C
= 37.5 A,
R
G
= 4.7
W,
V
GE
= 15 V,
Inductive Load
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
−
−
−
−
−
−
−
−
−
−
−
−
−
−
21
19
126
7
1.20
0.41
1.61
24
46
115
72
2.84
1.35
4.20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
mJ
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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AFGHL75T65SQD
TYPICAL CHARACTERISTICS
300
T
C
= 255C
20V
15V
12V
10V
300
T
C
= 1755C
20V
15V
Collector Current, I
C
[A]
240
240
Collector Current, I
C
[A]
V
GE
= 8V
12V
10V
180
180
V
GE
= 8V
120
120
60
60
0
0
0
1
2
3
4
Collector−Emitter Voltage, V
CE
[V]
5
0
1
2
3
4
Collector−Emitter Voltage, V
CE
[V]
5
Figure 1. Typical Output Characteristics
(T
J
= 255C)
300
Collector Current, I
C
[A]
240
180
120
60
0
3.0
Collector
−Emitter
Voltage, V
CE
[V]
Common Emitter
V
GE
= 15V
T
C
= 255C
T
C
= 1755C
Figure 2. Typical Output Characteristics
(T
J
= 1755C)
Common Emitter
V
GE
= 15V
150A
2.0
75A
I
C
= 40A
0
1
2
3
4
Collector−Emitter Voltage, V
CE
[V]
5
1.0
−100
−50
0
50
100
150
200
Collector−Emitter Case Temperature, T
C
[
5C]
Figure 3. Typical Saturation Voltage
Characteristics
20
16
12
8
150A
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
Collector
−Emitter
Voltage, V
CE
[V]
Common Emitter
T
C
= 255C
Collector
−Emitter
Voltage, V
CE
[V]
Common Emitter
T
C
= 1755C
16
12
8
150A
4
0
75A
I
C
= 40A
4
0
75A
I
C
= 40A
4
8
12
16
Gate−Emitter Voltage, V
GE
[V]
20
4
8
12
16
Gate−Emitter Voltage, V
GE
[V]
20
Figure 5. Saturation Voltage vs. V
GE
(T
J
= 255C)
Figure 6. Saturation Voltage vs. V
GE
(T
J
= 1755C)
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AFGHL75T65SQD
TYPICAL CHARACTERISTICS
(continued)
15
C
ies
Gate
−
Emitter Voltage, V
GE
[V]
10000
Capacitance [pF]
Common Emitter
T
C
= 255C
12
V
CC
= 200V
300V
400V
1000
C
oes
9
100
6
10
1
1
C
res
Common Emitter
V
GE
= 0V, f = 1Mhz
T
C
= 255C
3
10
Collector−Emitter Voltage, V
CE
[V]
30
0
0
30
60
90
Gate Charge, Q
g
[nC]
120
150
Figure 7. Capacitance Characteristics
200
1000
Figure 8. Gate Charge Characteristics
t
d(off)
Switching Time [ns]
t
r
Switching Time [ns]
100
t
f
Common Emitter
V
CC
= 400V, V
GE
= 15V,
I
C
= 75A
T
C
= 255C
T
C
= 1755C
td
(on)
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 75A
T
C
= 255C
T
C
= 1755C
20
0
10
10
20
30
Gate Resistance, R
g
[
W
]
40
50
0
10
20
30
Gate Resistance, R
g
[
W
]
40
50
Figure 9. Turn−On Characteristics
vs. Gate Resistance
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V,
R
G
= 4.7
W
T
C
= 255C
T
C
= 1755C
Figure 10. Turn−Off Characteristics
vs. Gate Resistance
1000
Switching Time [ns]
Switching Time [ns]
t
d(off)
100
100
t
f
t
r
10
t
d(on)
10
1
0
30
60
90
Collector Current, I
C
[A]
120
150
1
Common Emitter
V
CC
= 400V, V
GE
= 15V,
R
G
= 4.7
W
T
C
= 255C
T
C
= 1755C
0
30
60
90
120
Collector Current, I
C
[A]
150
Figure 11. Turn−On Characteristics
vs. Collector Current
Figure 12. Turn−Off Characteristics
vs. Collector Current
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