DDR DRAM Module, 128MX72, 0.75ns, CMOS, SODIMM-200
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | SODIMM |
package instruction | DIMM, |
Contacts | 200 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
access mode | DUAL BANK PAGE BURST |
Maximum access time | 0.75 ns |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-XZMA-N200 |
JESD-609 code | e4 |
memory density | 9663676416 bi |
Memory IC Type | DDR DRAM MODULE |
memory width | 72 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 200 |
word count | 134217728 words |
character code | 128000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 128MX72 |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
self refresh | YES |
Maximum supply voltage (Vsup) | 2.7 V |
Minimum supply voltage (Vsup) | 2.3 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Gold (Au) |
Terminal form | NO LEAD |
Terminal location | ZIG-ZAG |
Maximum time at peak reflow temperature | NOT SPECIFIED |