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WV3EG265M72EFSU265D4IN

Description
DDR DRAM Module, 128MX72, 0.75ns, CMOS, SODIMM-200
Categorystorage    storage   
File Size171KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

WV3EG265M72EFSU265D4IN Overview

DDR DRAM Module, 128MX72, 0.75ns, CMOS, SODIMM-200

WV3EG265M72EFSU265D4IN Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeSODIMM
package instructionDIMM,
Contacts200
Reach Compliance Codecompli
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
JESD-609 codee4
memory density9663676416 bi
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationZIG-ZAG
Maximum time at peak reflow temperatureNOT SPECIFIED

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