datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> IXTQ36N30P
PDF
Preview

IXTQ36N30P

Description
Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size293KB，6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric Compare View All

IXTQ36N30P Online Shopping

Suppliers Part Number Price MOQ In stock  
IXTQ36N30P - - View Buy Now

IXTQ36N30P Overview

Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

IXTQ36N30P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (ID)36 A
Maximum drain-source on-resistance0.11 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)90 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

Preview

Download Datasheet
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 36N30P
IXTP 36N30P
IXTQ 36N30P
V
DSS
I
D25
R
DS(on)
=
=
≤
300 V
36 A
Ω
110 mΩ
TO-263 (IXTA)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 10
Ω
T
C
= 25° C
Maximum Ratings
300
300
±30
±40
36
90
36
30
1.0
10
300
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°
C
G
G
D S
D(TAB)
G
S
D(TAB)
TO-220 (IXTP)
TO-3P (IXTQ)
D
S
D(TAB)
D = Drain
TAB = Drain
G = Gate
S = Source
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
Features
l
l
l
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
300
3.0
5.5
±100
1
200
92
110
V
V
nA
µA
µA
m
Ω
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2005 IXYS All rights reserved
DS99155E(10/05)

IXTQ36N30P Related Products

IXTQ36N30P IXTA36N30P IXTP36N30P
Description Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Power Field-Effect Transistor, 36A I(D), 300V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker Littelfuse Littelfuse Littelfuse
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compli _compli compli
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 1000 mJ 1000 mJ 1000 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 300 V 300 V 300 V
Maximum drain current (ID) 36 A 36 A 36 A
Maximum drain-source on-resistance 0.11 Ω 0.11 Ω 0.11 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 90 A 90 A 90 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
JEDEC-95 code - TO-263AB TO-220AB

Recommended Resources

8W audio power amplifier circuit

Multi-point control corridor timing light circuit

Camera pause controller circuit

8 sounds and 5 flashes toy gun circuit

LA4558 audio IC amplifier circuit diagram

Boiling water alarm circuit

Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. ECF-10-2.999M-GA
  2. JTS00RT-16-6SD(023)
  3. ADM1816-10ARTZ-RL7
  4. TN6501-6
  5. XC6204F37BDR-G
  6. FHLCYBYGN
  7. MCR1A36.5KOHM1%T
  8. RK73B2BTBK242J
  9. BZX84C3V6W
  10. GS1M-AU_R1_000A1
  11. P6SMB20A_R2_00001
  12. CR2010F287RE04Z

Popular Articles

  1. ST monolithic GaN gate drivers accelerate industrial and home automation and increase flexibility
  2. A multifunctional calculator based on 51 single-chip microcomputer, supporting binary and octet decimal negative number calculation
  3. The road to the implementation of the “metaverse”: new scenarios and three major hard technology opportunities
  4. Please refer to the correct way to maintain your Tektronix oscilloscope!
  5. Electric vehicles have a range of over 1,000 kilometers: Has silicon negative electrode surpassed solid-state?
  6. TDS1001B/TDS2001C/TDS2012B Model Number
  7. Network analyzer test line loss_Network analyzer test antenna isolation
  8. Multimeter determines the positive and negative poles of the speaker unit
  9. s3c2440 ARM9 bare metal driver part 2 - 2440 system clock
  10. Introduction to Oscilloscope Data Acquisition

Technical ResourceMore

  1. Source Parameter Estimation Based on Joint Technology
  2. [Selected interesting circuits for life]. Xiaofan. Scanned version
  3. Voltage Harmonic Detection in Small Rural Steel Plants Based on Virtual Instrument
  4. A transient enhancement circuit design for LDO without external capacitor
  5. Single chip traffic light control circuit diagram
  6. TI-Analog Applications Journal-2013 1st Quarter
  7. M16_Horse electronic data
  8. Design of 2.1 channel power amplifier
  9. Attenuation characteristics of electromagnetic waves penetrating walls
  10. Fundamentals of Electronic Technology - Digital Part (Seventh Edition) Exercises and Answers (Roger Qinzhen)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号