High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH16N170
IXBT16N170
V
CES
= 1700V
I
C90
= 16A
V
CE(sat)
≤
3.3V
TO-247 (IXBH)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
C
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Ω
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 22
Ω
Clamped inductive load
T
C
= 25°C
Maximum Ratings
1700
1700
± 20
± 30
40
16
120
I
CM
= 40
V
CES
≤
1350
250
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
High blocking voltage
International standard packages
Low conduction losses
Advantages
Low gate drive requirement
High power density
V
5.5
V
Applications:
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
Laser generator
Capacitor discharge circuit
AC switches
G = Gate
E = Emitter
G
TO-268 (IXBT)
G
C
E
C (TAB)
E
C (TAB)
C
= Collector
TAB = Collector
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
300
260
1.13/10
6
4
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
GE
= 0V
I
C
= 250μA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0V
V
CE
= 0V, V
GE
= ± 20V
I
C
= 16A, V
GE
= 15V, Note 1
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
1700
3.0
T
J
= 125°C
50
μA
2 mA
±100
3.3
3.2
nA
V
V
© 2008 IXYS CORPORATION, All rights reserved
DS98657B(10/08)
IXBH16N170
IXBT16N170
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
g
fS
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Resistive Switching times, T
J
= 25°C
I
C
= 16A, V
GE
= 15V
V
CE
= 850V, R
G
= 22
Ω
I
C
= 16A, V
GE
= 15V, V
CE
= 0.5 • V
CES
V
CE
= 25V, V
GE
= 0V, f = 1MHz
I
C
= 16A, V
CE
= 10V, Note 1
Characteristic Values
Min. Typ.
Max.
8.5
14
1960
85
24
72
12
25
38
101
125
480
37
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
0.50
0.25
TO-247 (IXBH) Outline
1
2
3
∅
P
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Dim.
Resistive Switching times, T
J
= 125°C
I
C
= 16A, V
GE
= 15V
V
CE
= 850V, R
G
= 22
Ω
183
235
705
R
thJC
R
thCS
°
C/W
°
C/W
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
2.2
2.6
A
2
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Reverse Diode
Symbol Test Conditions
(T
J
= 25°C unless otherwise specified)
V
F
t
rr
I
RM
I
F
= 16A, V
GE
= 0V
I
F
= 8A, V
GE
= 0V, -di
F
/dt = 100A/μs
V
R
= 100V, V
GE
= 0V
1.32
26
TO-268 (IXBT) Outline
Characteristic Values
Min. Typ. Max.
2.6
V
μs
A
Note 1: Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXBH16N170
IXBT16N170
Fig. 1. Output Characteristics
@ 25ºC
32
28
24
V
GE
= 15V
13V
11V
140
V
GE
= 15V
120
13V
100
Fig. 2. Extended Output Characteristics
@ 25ºC
I
C
- Amperes
20
16
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
9V
I
C
-
Amperes
80
60
11V
7V
9V
40
20
0
0
3
6
9
12
15
18
21
24
27
30
7V
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125ºC
32
28
24
V
GE
= 15V
13V
11V
1.7
1.6
1.5
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
V
GE
= 15V
I
C
= 32A
V
CE(sat)
- Normalized
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I
C
I
C
- Amperes
20
16
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
9V
I
C
= 16A
7V
= 8A
5V
0.7
0.6
5.0
-50
-25
0
25
50
75
100
125
150
4.5
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
6.5
6.0
5.5
5.0
T
J
= 25ºC
50
45
40
I
C
Fig. 6. Input Admittance
T
J
= - 40ºC
25ºC
125ºC
I
C
-
Amperes
= 32A
35
30
25
20
15
10
V
CE
- Volts
4.5
4.0
3.5
3.0
2.5
8A
2.0
1.5
5
6
7
8
9
10
11
12
13
14
15
16A
5
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
V
GE
- Volts
V
GE
- Volts
© 2008 IXYS CORPORATION, All rights reserved
IXBH16N170
IXBT16N170
Fig. 7. Transconductance
24
22
20
18
T
J
= - 40ºC
50
45
40
25ºC
35
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
g
f s
-
Siemens
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
I
F
- Amperes
30
25
20
15
10
5
0
T
J
= 125ºC
T
J
= 25ºC
125ºC
45
50
55
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
I
C
- Amperes
V
F
- Volts
Fig. 9. Gate Charge
16
14
12
V
CE
= 850V
I
C
= 16A
10,000
Fig. 10. Capacitance
f
= 1 MHz
Capacitance - PicoFarads
I
G
= 10mA
V
GE
- Volts
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
1,000
Cies
Coes
100
Cres
10
0
5
10
15
20
25
30
35
40
Q
G
- NanoCoulombs
V
CE
- Volts
Fig. 11. Reverse-Bias Safe Operating Area
45
40
35
1.000
Fig. 12. Maximum Transient Thermal
Impedance
25
20
15
10
5
0
200
T
J
= 125ºC
R
G
= 22Ω
dV / dt < 10V / ns
Z
(th)JC
- ºC / W
400
600
800
1000
1200
1400
1600
1800
I
C
- Amperes
30
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
CE
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: B_16N170(4A)10-06-08
IXBH16N170
IXBT16N170
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
340
300
260
R
G
= 22Ω
V
GE
= 15V
V
CE
= 850V
I
= 32A
350
R
G
= 22Ω
300
250
200
150
100
50
0
25
35
45
55
65
75
85
95
105
115
125
8
10
12
14
16
18
20
22
24
26
28
30
32
T
J
= 25ºC
V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
t
r
- Nanoseconds
220
180
140
C
I
100
60
C
= 16A
T
J
- Degrees Centigrade
t
r
- Nanoseconds
I
C
- Amperes
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
800
700
600
180
900
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
260
t
r
V
CE
= 850V
t
d(on)
- - - -
I
C
= 32A
T
J
= 125ºC, V
GE
= 15V
160
140
120
100
80
I
C
= 16A
60
40
20
160
t
f
800
V
CE
= 850V
t
d(off)
- - - -
250
I
C
= 16A
240
230
220
210
I
C
= 32A
200
190
125
R
G
= 22Ω, V
GE
= 15V
t
d(on)
- Nanoseconds
t
r
- Nanoseconds
500
400
300
200
100
0
20
40
60
80
100
120
140
t
f
- Nanoseconds
700
600
500
400
300
200
25
35
45
55
65
75
85
95
105
115
t
d(off)
- Nanoseconds
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
1200
1100
1000
360
1000
900
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
1400
340
320
t
f
V
CE
= 850V
t
d(off)
- - - -
t
f
V
CE
= 850V
t
d(off
)
- - - -
R
G
= 22Ω, V
GE
= 15V
T
J
= 125ºC, V
GE
= 15V
1200
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
800
700
600
500
400
300
200
8
10
12
14
16
18
20
22
24
26
28
30
32
T
J
= 25ºC
T
J
= 125ºC
280
260
240
220
200
180
160
t
f
- Nanoseconds
900
300
800
700
600
500
400
300
20
1000
800
I
C
= 16A
600
400
I
C
= 32A
200
0
160
40
60
80
100
120
140
I
C
- Amperes
R
G
- Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: B_16N170(4A)10-06-08
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