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2SK259

Description
Fast Switching Speed
File Size53KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SK259 Overview

Fast Switching Speed

INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK259
DESCRIPTION
·Drain
Current
–I
D
=5A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 350V(Min)
·Fast
Switching Speed
APPLICATIONS
·Designed
especially for high voltage,high speed applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
350
±20
5
125
200
-65~200
UNIT
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.67
62.5
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark
PDF pdfFactory Pro
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