HB56A19B-6L datasheet, PDF - EEWORLD Datasheet

HB56A19B-6L: DescriptionFast Page DRAM Module, 1MX9, 60ns, CMOS, SIMM-30; Categorystorage storage; File Size320KB，11 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56A19B-6L Overview

Fast Page DRAM Module, 1MX9, 60ns, CMOS, SIMM-30

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	SIMM
package instruction	SIMM, SIM30
Contacts	30
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
I/O type	COMMON
JESD-30 code	R-XSMA-N30
memory density	9437184 bi
Memory IC Type	FAST PAGE DRAM MODULE
memory width	9
Number of functions	1
Number of ports	1
Number of terminals	30
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX9
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SIM30
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	20.447 mm
Maximum standby current	0.0027 A
Maximum slew rate	0.81 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	2.54 mm
Terminal location	SINGLE

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