EEWORLDEEWORLDEEWORLD

Part Number

Search

EP1034EE

Description
Variable Capacitance Diode, Ultra High Frequency, 22pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size236KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

EP1034EE Overview

Variable Capacitance Diode, Ultra High Frequency, 22pF C(T), 30V, Silicon, Abrupt

EP1034EE Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-CXMW-F3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage30 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Minimum diode capacitance ratio2.9
Nominal diode capacitance22 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeX-CXMW-F3
Number of components2
Number of terminals3
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeUNSPECIFIED
Package formMICROWAVE
Maximum power dissipation5 W
Certification statusNot Qualified
minimum quality factor800
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountYES
Terminal formFLAT
Terminal locationUNSPECIFIED
Varactor Diode ClassificationABRUPT

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号