The UT54ACS109 and the UT54ACTS109 are dual J-K posi-
tive triggered flip-flops. A low level at the preset or clear inputs
sets or resets the outputs regardless of the other input levels.
When preset and clear are inactive (high), data at the J and K
input meeting the setup time requirements are transferred to the
outputs on the positive-going edge of the clock pulse. Following
the hold time interval, data at the J and K input can be changed
without affecting the levels at the outputs. The flip-flops can
perform as toggle flip-flops by grounding K and tying J high.
They also can perform as D flip-flops if J and K are tied together.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
INPUTS
PRE
L
H
L
H
H
H
H
H
CLR
H
L
L
H
H
H
H
H
L
CLK
X
X
X
J
X
X
X
L
H
L
H
X
K
X
X
X
L
L
H
H
X
OUTPUT
Q
H
L
H
1
L
Q
L
H
H
1
H
Toggle
No Change
H
L
16-Lead Flatpack
Top View
CLR1
J1
K1
CLK1
PRE1
Q1
Q1
V
SS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
DD
CLR2
J2
K2
CLK2
PRE2
Q2
Q2
LOGIC SYMBOL
PRE1
J1
CLK1
K1
CLR1
PRE2
J2
CLK2
(5)
(2)
(4)
(3)
(1)
(11)
(14)
(12)
(9)
Q2
(10)
Q2
S
J1
C1
K1
R
(6)
Q1
(7)
Q1
No Change
(13)
K2
(15)
CLR2
Note:
1. The output levels in this configuration are not guaranteed to meet the mini-
mum levels for V
OH
if the lows at preset and clear are near V
IL
maximum. In
addition, this configuration is nonstable; that is, it will not persist when either
preset or clear returns to its inactive (high) level.
Note:
1. Logic symbol in accordance with ANSI/IEEE standard 91-1984 and
IEC Publication 617-12.
61
RadHard MSI Logic
UT54ACS109/UT54ACTS109
LOGIC DIAGRAM
PRE
CLK
Q
J
Q
K
CLR
RADIATION HARDNESS SPECIFICATIONS
1
PARAMETER
Total Dose
SEU Threshold
2
SEL Threshold
Neutron Fluence
LIMIT
1.0E6
80
120
1.0E14
UNITS
rads(Si)
MeV-cm
2
/mg
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
DD
V
I/O
T
STG
T
J
T
LS
JC
PARAMETER
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT
-0.3 to 7.0
-.3 to V
DD
+.3
-65 to +150
+175
+300
20
10
1
UNITS
V
V
C
C
C
C/W
mA
W
I
I
P
D
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RadHard MSI Logic
62
UT54ACS109/UT54ACTS109
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
V
IN
T
C
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to V
DD
-55 to + 125
UNITS
V
V
C
63
RadHard MSI Logic
UT54ACS109/UT54ACTS109
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V 10%; V
SS
= 0V
6
, -55 C < T
C
< +125 C)
SYMBOL
V
IL
PARAMETER
Low-level input voltage
1
ACTS
ACS
High-level input voltage
1
ACTS
ACS
Input leakage current
ACTS/ACS
Low-level output voltage
3
ACTS
ACS
High-level output voltage
3
ACTS
ACS
Short-circuit output current
2 ,4
ACTS/ACS
Output current
10
(Sink)
I
OH
Output current
10
(Source)
P
total
I
DDQ
I
DDQ
Power dissipation
2, 8 ,9
Quiescent Supply Current
Quiescent Supply Current Delta
ACTS
V
IN
= V
DD
or V
SS
I
OL
= 8.0mA
I
OL
= 100 A
I
OH
= -8.0mA
I
OH
= -100 A
V
O
= V
DD
and V
SS
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
C
L
= 50pF
V
DD
= 5.5V
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
C
IN
C
OUT
Input capacitance
5
Output capacitance
5
= 1MHz @ 0V
= 1MHz @ 0V
15
15
pF
pF
2.0
10
1.6
mW/
MHz
A
mA
-8
mA
.7V
DD
V
DD
- 0.25
-200
8
200
.5V
DD
.7V
DD
-1
1
CONDITION
MIN
MAX
0.8
.3V
DD
UNIT
V
V
IH
V
I
IN
V
OL
A
0.40
0.25
V
V
OH
V
I
OS
I
OL
mA
mA
RadHard MSI Logic
64
UT54ACS109/UT54ACTS109
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
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