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1N4448WT

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size59KB,3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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Rectifier Diode,

1N4448WT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
Reach Compliance Codeunknow
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EXPITAXIAL PLANAR SWITCHING DIODE
1N4448WT
SOD-523
PLASTIC PACKAGE
Marking
1N4448WT = 48 with cathode band
Ultra High Speed Silicon Switching Diode
MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Forward Current (Continuous)
Repetitive Peak Forward Current
Forward Surge Current
Forward Surge Current
Power Dissipation
Operating and Storage Junction
Temperature
THERMAL RESISTANCE
From Junction to Ambient
R
th (j-a)
500
o
SYMBOL
V
R
V
RRM
I
F
I
FRM
I
FSM
I
FSM
P
D
T
j
, T
stg
tp=1ms
tp=1s
VALUE
75
100
250
500
4.0
1.0
250
- 65 to +150
UNIT
V
V
mA
mA
A
A
mW
o
C
C/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Reverse Voltage Leakage Current
SYMBOL
I
R
TEST CONDITION
V
R
=75V
V
R
=20V
I
R
=100µA
I
F
= 5mA
I
F
= 100mA
DYNAMIC CHARACTERISTICS
DESCRIPTION
Total Capacitance
MIN
TYP
MAX
5.0
25
75
0.62
0.72
1.0
UNIT
µA
nA
V
V
V
Reverse Breakdown Voltage
Forward Voltage
V
(BR) R
V
F
SYMBOL
C
T
TEST CONDITION
V
R
=0V, f=1MHz
I
F
=10mA to
I
R
=60mA, R
L
100
Ω,
Measured at I
R
=1mA
MIN
TYP
MAX
4.0
UNIT
pF
Reverse Recovery Time
t
rr
4.0
ns
1N4448WT 051107E
Continental Device India Limited
Data Sheet
Page 1 of 3

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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