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DSK33

Description
1 A, 40 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size413KB,2 Pages
ManufacturerOlitech Electronics
Websitehttp://olitech-elec.com/En_index.asp
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DSK33 Overview

1 A, 40 V, SILICON, SIGNAL DIODE

Email: info@olitech-elec.com
Website: www.olitech-elec.com
Surface Mount Schottky Rectifier
Major Ratings and Characteristics
1.0 A
I
F(AV)
20 V to 100 V
V
RRM
25 A
I
FSM
0.55 V , 0.70 V,0.85V
V
F
°
125 C
T
j
max.
Features
DSK12~DSK110
Low profile package
Ideal for automated placement
Ultrafast reverse recovery time
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case:
JEDEC SOD-123FL molded plastic
body over passivated chip
Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity:
Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
°
(TA = 25 C unless otherwise noted)
Symbol DSK12 DSK13 DSK14 DSK15 DSK16 DSK18 DSK110 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
Operating junction and storage
temperature range
T
A
= 25
T
A
= 100℃
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
T
J
, T
STG
20
14
20
30
21
30
40
28
40
50
35
50
1
25
60
42
60
80
56
80
100
70
100
V
V
V
A
A
0.55
0.70
1.0
10
110
65 to +125
0.85
V
mA
Typical junction capacitance at 4.0 V ,1MHz
OLITECH ELECTRONICS CO. LTD.
Page:P2-P1

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