IXFK16N90Q datasheet, PDF - EEWORLD Datasheet

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IXFK16N90Q: DescriptionPower Field-Effect Transistor, 16A I(D), 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXFK16N90Q Overview

Power Field-Effect Transistor, 16A I(D), 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

IXFK16N90Q Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
Parts packaging code	TO-264AA
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-264AA
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	64 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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Advanced Technical Information

HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Q

, High dv/dt

IXFH 16N90Q

IXFK 16N90Q

IXFT 16N90Q

DSS

= 900 V

16 A

D25

DS(on)

= 0.65

250 ns

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

Weight

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 1 MW

Continuous

Transient

= 25°C

= 25°C, pulse width limited by T

= 25°C

, di/dt

100 A/ms, V

DSS

150°C, R

= 2

= 25°C

Maximum Ratings

900

±20

±30

1.5

360

-55 ... +150

150

-55 ... +150

V/ns

°C

TO-247 AD (IXFH)

(TAB)

TO-268 (D3) ( IXFT)

TO-264 AA (IXFK)

1.6 mm (0.063 in) from case for 10 s

Mounting torque

TO-247

TO-264

TO-247

TO-268

TO-264

300

D (TAB)

1.13/10 Nm/lb.in.

0.9/6 Nm/lb.in.

G = Gate

S = Source

TAB = Drain

Features

Symbol

Test Conditions

Characteristic Values

= 25°C, unless otherwise specified)

min. typ. max.

900

3.0

5.0

±200

= 25°C

= 125°C

0.65

• IXYS advanced low Q

process

• International standard packages

• Epoxy meet UL 94 V-0, flammability

classification

• Low R

DS (on)

low Q

• Avalanche energy and current rated

• Fast intrinsic rectifier

Advantages

• Easy to mount

• Space savings

• High power density

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 250

= V

, I

= 4 mA

±20

, V

= 0

= V

DSS

= 0 V

= 10 V, I

= 0.5 • I

D25

Pulse test, t

300

ms,

duty cycle d

2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

98668 (11/99)

1-2

IXFK16N90Q Related Products

	IXFK16N90Q	IXFT16N90Q
Description	Power Field-Effect Transistor, 16A I(D), 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3	Power Field-Effect Transistor, 16A I(D), 900V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, PLASTIC PACKAGE-4
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	IXYS	IXYS
Parts packaging code	TO-264AA	TO-268
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-4
Contacts	3	4
Reach Compliance Code	compli	not_compliant
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1500 mJ	1500 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	900 V	900 V
Maximum drain current (ID)	16 A	16 A
Maximum drain-source on-resistance	0.65 Ω	0.65 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-264AA	TO-268
JESD-30 code	R-PSFM-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	64 A	64 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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