SMA5J5.0 thru 40CA
New Product
Vishay Semiconductors
formerly General Semiconductor
High Power Density Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
Stand-off Voltage
5.0 to 40 V
Peak Pulse Power
500 W
DO-214AC
(SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 MIN.
(1.68 MIN.)
0.074 MAX.
(1.88 MAX.)
0.177 (4.50)
Dimensions in inches
and (millimeters)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
• Very fast response time
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.002oz., 0.064g
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMA5J10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000µs waveform
(1,2)
(see fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
500
See Next Table
40
80
25
–55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88875
11-Mar-04
www.vishay.com
1
SMA5J5.0 thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
5AD
5AD
5AE
5AE
5AF
5AF
5AG
5AG
5AH
5AH
5AK
5AK
5AL
5AL
5AM
5AM
5AN
5AN
5AP
5AP
5AQ
5AQ
5AR
5AR
5AS
5AS
5AT
5AT
5AU
5AU
5AV
5AV
5AW
5AW
5AX
5AX
5AY
5AY
5AZ
5AZ
5BD
5BD
5BE
5BE
5BF
5BF
5BG
5BG
5BH
5BH
5BK
5BK
5BL
5BL
5BM
5BM
6BN
5BN
5BP
5BP
5BQ
5BQ
5BR
5BR
5BS
5BS
5BT
5BT
5BU
5BU
5BV
5BV
5BW
5BW
5BX
5BX
5BY
5BY
5BZ
5BZ
5CD
5CD
5CE
5CE
5CF
5CF
5CG
5CG
5CH
5CH
5CK
5CK
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
F
= 3.5V at I
F
= 25A (uni-directional only)
SMA5J5.0
SMA5J5.0A
(5)
SMA5J6.0
SMA5J6.0A
SMA5J6.5
SMA5J6.5A
SMA5J7.0
SMA5J7.0A
SMA5J7.5
SMA5J7.5A
SMA5J8.0
SMA5J8.0A
SMA5J8.5
SMA5J8.5A
SMA5J9.0
SMA5J9.0A
SMA5J10
SMA5J10A
SMA5J11
SMA5J11A
SMA5J12
SMA5J12A
SMA5J13
SMA5J13A
SMA5J14
SMA5J14A
SMA5J15
SMA5J15A
SMA5J16
SMA5J16A
SMA5J17
SMA5J17A
SMA5J18
SMA5J18A
SMA5J20
SMA5J20A
SMA5J22
SMA5J22A
SMA5J24
SMA5J24A
SMA5J26
SMA5J26A
SMA5J28
SMA5J28A
SMA5J30
SMA5J30A
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
800
52.1
9.6
800
54.3
9.2
800
43.9
11.4
800
48.5
10.3
500
40.7
12.3
500
44.6
11.2
200
37.6
13.3
200
41.7
12.0
100
35.0
14.3
100
38.8
12.9
50
33.3
15.0
50
36.8
13.6
10
31.4
15.9
10
34.7
14.4
5.0
29.6
16.9
5.0
32.5
15.4
1.0
26.6
18.8
1.0
29.4
17.0
1.0
24.9
20.1
1.0
27.5
18.2
1.0
22.7
22.0
1.0
25.1
19.9
1.0
21.0
23.8
1.0
23.3
21.5
1.0
19.4
25.8
1.0
21.6
23.2
1.0
18.6
26.9
1.0
20.5
24.4
1.0
17.4
28.8
1.0
19.2
26.0
1.0
16.4
30.5
1.0
18.1
27.6
1.0
15.5
32.2
1.0
17.1
29.2
1.0
14.0
35.8
1.0
15.4
32.4
1.0
12.7
39.4
1.0
14.1
35.5
1.0
11.6
43.0
1.0
12.9
38.9
1.0
10.7
46.6
1.0
11.9
42.1
1.0
10.0
50.0
1.0
11.0
45.4
1.0
9.3
53.5
1.0
10.3
48.4
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMA5J5.0CA, the maximum V
(BR)
is 7.25V.
www.vishay.com
2
Document Number 88875
11-Mar-04
SMA5J5.0 thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. V
Device Type
Device
Marking
Code
UNI
BI
5CL
5CL
5CM
5CM
5CN
5CN
5CP
5CP
5CQ
5CQ
5CR
5CR
Breakdown
Voltage
V
(BR)
(V)
(1)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
F
= 3.5V at I
F
= 25A (uni-directional only)
SMA5J33
SMA5J33A
SMA5J36
SMA5J36A
SMA5J40
SMA5J40A
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
(µA)
(3)
(A)
(2)
V
C
(V)
1.0
8.5
59.0
1.0
9.4
53.3
1.0
7.8
64.3
1.0
8.6
58.1
1.0
7.0
71.4
1.0
7.8
64.5
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88875
11-Mar-04
www.vishay.com
3
SMA5J5.0 thru 40CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
100
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
P
PPM
– Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
75
50
1
25
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
0
25
50
75
100
125
150
175
200
t
d
– Pulse Width (sec.)
T
A
– Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
Fig. 4 – Typical Junction Capacitance
C
J
– Junction Capacitance (pF)
Uni-Directional
Bi-Directional
Measured at
Zero Bias
1,000
T
J
= 25°C
f = 1.0MHz
I
PPM
– Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value – IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
Measured at
Stand-Off
Voltage, V
WM
10
td
0
0
1.0
2.0
3.0
4.0
1
10
100
200
t – Time (ms)
V
WM
– Reverse Stand-Off Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
– Peak Forward Surge Current (A)
100
200
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Transient Thermal Impedance (°C/W)
100
10
50
1
0.01
10
1
5
10
50
100
0.1
1
10
100
1000
t
p
– Pulse Duration (sec)
Number of Cycles at 60 Hz
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Document Number 88875
11-Mar-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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