AP9468GS-HF datasheet, PDF - EEWORLD Datasheet

AP9468GS-HF: DescriptionN-CHANNEL ENHANCEMENT MODE POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size92KB，4 Pages; ManufacturerAPEC; Environmental Compliance

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AP9468GS-HF Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	APEC
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.007 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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