AP70U02GH
Preliminary
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
25V
9mΩ
60A
Description
The Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
25
± 20
60
41
220
47
0.31
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
.
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.2
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200831071pre-1/4
AP70U02GH
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Min.
25
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
39
-
-
18.5
3.7
12.1
8.3
102
24
12
202
198
Max. Units
-
9
15
3
-
1
±100
30
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=25V, V
GS
=0V
V
GS
= ±20V
I
D
=40A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=40A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.375Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1360 2180
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30
25
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP70U02GH
150
100
T
C
=25 C
120
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
C
=175 C
80
o
10V
7.0V
5.0V
4.5V
90
60
60
40
V
G
=3.0V
20
30
V
G
=3.0V
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
1.8
I
D
= 30 A
T
C
=25
℃
13
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
11
9
1
7
5
0.6
2
4
6
8
10
-50
0
50
100
150
200
VGS , Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
40
30
Normalized V
GS(th)
(V)
1.4
1.2
I
S
(A)
20
T
j
=175
o
C
T
j
=25
o
C
0.6
10
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP70U02GH
f=1.0MHz
12
10000
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
9
C (pF)
V
DS
= 12 V
V
DS
= 15 V
V
DS
= 20 V
6
C
iss
1000
3
C
oss
C
rss
0
0
10
20
30
40
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
10
0.1
0.1
0.05
1
T
c
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
DC
P
DM
0.02
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
SYMBOLS
Millimeters
MIN
NOM
MAX
A2
A3
B1
D
D1
E3
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.5
5.10
0.50
--
0.35
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
0.65
E2
E3
E1
F
F1
E1
E2
e
C
B1
F1
F
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
e
A2
R : 0.127~0.381
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
70U02GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
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