AP4438GSM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Recovery Time
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
D
D
D
D
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
BV
DSS
R
DS(ON)
G
30V
11.5mΩ
11.7A
I
D
D
SO-8
S
S
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
S
Schottky Diode
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
V
KA
I
F
@T
A
=25℃
I
FM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Schottky Reverse Voltage
Continous Forward Current
Pulsed Diode Forward Current
Max Power Dissipation (MOSFET)
Max Power Dissipation (Schottky)
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
30
+12
11.7
9.3
50
30
1
25
2.5
2.0
-55 to 150
-55 to 150
Units
V
V
A
A
A
V
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
(MOSFET)
Value
50
60
3
Unit
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient (Schottky)
Data and specifications subject to change without notice
1
201008121
AP4438GSM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=11A
V
GS
=4.5V, I
D
=7A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=24V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=7A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
18
-
-
10
2.5
5.5
8
6
23
5.5
810
160
110
Max. Units
-
11.5
18
3
-
100
+100
16
-
-
-
-
-
-
1300
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Body Diode+Schottky Reverse Recovery Time
I
S
=7A,
Body Diode+Schottky Reverse Recovery Charge
Test Conditions
Min.
-
-
-
Typ.
0.48
17
8
Max. Units
0.5
-
-
V
ns
nC
Diode+Schottky Forward On Voltage
2
I
S
=1.0A, V
GS
=0V
V
GS
=0
V
,
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4438GSM-HF
50
50
T
A
=25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
=4.0V
T
A
= 150 C
40
o
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
30
30
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I
D
=7A
T
A
=25
o
C
14
1.6
I
D
= 11 A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
12
1.2
1.0
10
0.8
8
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.50
12
I
D
=10mA
10
1.25
8
I
S
(A)
T
j
=150 C
o
T
j
=25 C
o
6
Normalized V
GS(th)
(V)
1.2
1.00
4
0.75
2
MOSFET+Schottky
0
0.50
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4438GSM-HF
10
1200
f=1.0MHz
I
D
=7A
V
GS
, Gate to Source Voltage (V)
V
DS
= 15 V
8
1000
800
6
C
iss
C (pF)
600
4
400
2
200
C
oss
C
rss
0
0
4
8
12
16
20
24
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this
area limited by
R
DS(ON)
10
Normalized Thermal Response (R
thja
)
100us
0.2
0.1
0.1
I
D
(A)
1ms
1
0.05
0.02
0.01
10ms
100ms
0.1
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125℃/W
1s
o
T
A
=25 C
Single Pulse
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
RF/Wirelessly
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