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MJE13005L-B-T6S-K

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size412KB,10 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

MJE13005L-B-T6S-K Overview

Power Bipolar Transistor

MJE13005L-B-T6S-K Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionTO-126S, 3 PIN
Reach Compliance Codecompli
Maximum collector current (IC)4 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
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