Power Bipolar Transistor
Parameter Name | Attribute value |
Maker | UNISONIC TECHNOLOGIES CO.,LTD |
package instruction | TO-126S, 3 PIN |
Reach Compliance Code | compli |
Maximum collector current (IC) | 4 A |
Collector-emitter maximum voltage | 400 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 20 |
JEDEC-95 code | TO-126 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 4 MHz |