IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM
Parameter Name | Attribute value |
Maker | Toshiba Semiconductor |
Parts packaging code | MODULE |
package instruction | DIMM, DIMM144,32 |
Contacts | 144 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
access mode | SINGLE BANK PAGE BURST |
Maximum access time | 6 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 125 MHz |
I/O type | COMMON |
JESD-30 code | R-XDMA-N144 |
memory density | 1073741824 bi |
Memory IC Type | SYNCHRONOUS DRAM MODULE |
memory width | 64 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 144 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16MX64 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM144,32 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
self refresh | YES |
Maximum standby current | 0.004 A |
Maximum slew rate | 0.6 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 0.8 mm |
Terminal location | DUAL |
THLY12N11B80L | THLY12N11B70L | THLY12N11B75 | THLY12N11B70 | THLY12N11B80 | |
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Description | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM |
Parts packaging code | MODULE | MODULE | MODULE | MODULE | MODULE |
package instruction | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 |
Contacts | 144 | 144 | 144 | 144 | 144 |
Reach Compliance Code | unknow | unknown | unknown | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
Maximum access time | 6 ns | 5.4 ns | 5.4 ns | 5.4 ns | 6 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 125 MHz | 143 MHz | 133 MHz | 143 MHz | 125 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 |
memory density | 1073741824 bi | 1073741824 bit | 1073741824 bit | 1073741824 bi | 1073741824 bi |
Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
memory width | 64 | 64 | 64 | 64 | 64 |
Number of functions | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 144 | 144 | 144 | 144 | 144 |
word count | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
character code | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 16MX64 | 16MX64 | 16MX64 | 16MX64 | 16MX64 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 |
self refresh | YES | YES | YES | YES | YES |
Maximum standby current | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A |
Maximum slew rate | 0.6 mA | 0.68 mA | 0.64 mA | 0.68 mA | 0.6 mA |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
Maker | Toshiba Semiconductor | - | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |