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THLY12N11B80L

Description
IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM
Categorystorage    storage   
File Size631KB,13 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

THLY12N11B80L Overview

IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM

THLY12N11B80L Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeMODULE
package instructionDIMM, DIMM144,32
Contacts144
Reach Compliance Codeunknow
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N144
memory density1073741824 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM144,32
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.004 A
Maximum slew rate0.6 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch0.8 mm
Terminal locationDUAL

THLY12N11B80L Related Products

THLY12N11B80L THLY12N11B70L THLY12N11B75 THLY12N11B70 THLY12N11B80
Description IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM IC 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144, SODIMM-144, Dynamic RAM
Parts packaging code MODULE MODULE MODULE MODULE MODULE
package instruction DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
Contacts 144 144 144 144 144
Reach Compliance Code unknow unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Maximum access time 6 ns 5.4 ns 5.4 ns 5.4 ns 6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 125 MHz 143 MHz 133 MHz 143 MHz 125 MHz
I/O type COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
memory density 1073741824 bi 1073741824 bit 1073741824 bit 1073741824 bi 1073741824 bi
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64 64 64 64
Number of functions 1 1 1 1 1
Number of ports 1 1 1 1 1
Number of terminals 144 144 144 144 144
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C
organize 16MX64 16MX64 16MX64 16MX64 16MX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192 8192 8192
self refresh YES YES YES YES YES
Maximum standby current 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A
Maximum slew rate 0.6 mA 0.68 mA 0.64 mA 0.68 mA 0.6 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor

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