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SF1001GA

Description
Rectifier Diode, 10A, 50V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size107KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SF1001GA Overview

Rectifier Diode, 10A, 50V V(RRM),

SF1001GA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationSUPER FAST RECOVERY
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Humidity sensitivity level1
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage50 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SF1001G
THRU
SF1008G
10.0 AMPS. Glass Passivated Super Fast Rectifiers
Voltage Range
50 to 600 Volts
Current
10.0 Amperes
Features
a
a
a
a
a
a
a
a
a
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals:
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
a
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SF
SF
SF
SF
SF
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375 (9.5mm) Lead Length @T
C
= 100°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=100°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance RÛJC (Note 3)
SF
SF
SF
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G
Units
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
480
600
10.0
125
0.975
10.0
400
35
70
50
1.3
1.7
V
uA
uA
nS
pF
°C
/W
°C
°C
3.0
Operating Temperature Range T
J
-65 to +150
Storage Temperature Range T
STG
-65 to +150
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
3. Thermal Resistance from Junction to Case Mounted on Heatsink.
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