DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, FBGA-84
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SK Hynix |
| package instruction | TFBGA, |
| Reach Compliance Code | compli |
| access mode | MULTI BANK PAGE BURST |
| Maximum access time | 0.45 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-PBGA-B84 |
| length | 12.5 mm |
| memory density | 1073741824 bi |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 84 |
| word count | 67108864 words |
| character code | 64000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 64MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | 260 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 20 |
| width | 7.5 mm |
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