Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | SANYO |
package instruction | , |
Reach Compliance Code | unknow |
Configuration | Single |
Maximum drain current (Abs) (ID) | 4 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 1 W |
surface mount | YES |