DATASHEET
IS-2981RH, IS-2981EH
Radiation Hardened 8-Channel Source Driver
The Radiation Hardened IS-2981RH, IS-2981EH are monolithic
devices designed for use in high-side switching applications
that benefit from separate grounds for the logic and loads. The
devices have a 5V to 80V operating supply voltage range and is
capable of sourcing -200mA continuously from each output.
The outputs are controlled by active-high inputs and may be
paralleled to increase the drive current. The output clamp
diodes prevent device damage, when switching inductive
loads.
Constructed with the Intersil bonded wafer, dielectrically
isolated HVTDLM process, these single event latch-up immune
devices have been specifically designed to provide highly
reliable performance in harsh radiation environments. They
are fully guaranteed for 100krad(Si) high dose rate and
50krad(Si) low dose rate total dose performance through
wafer-by-wafer radiation testing, and are production tested
over the full military temperature range.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD
5962-00520.
A “hot-link” is provided on our
homepage for downloading
FN4869
Rev 1.00
Jun 24, 2013
Features
• Electrically screened to SMD #
5962-00520
• QML qualified per MIL-PRF-38535 requirements
• Radiation environment
- Single event latch-up immune DI process
- High dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)
- Low dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50krad(Si)
• Input voltage range . . . . . . . . . . . . . . . 0.0V to V
CC
(20V max)
• Supply voltage range . . . . . . . . . . . . . . . . . . . . . . . . . 5V to 80V
• Turn-on delay time . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µs (max)
• Turn-off delay time . . . . . . . . . . . . . . . . . . . . . . . . . . 11µs (max)
• Output clamp diode, V
F
. . . . . . . . . . . . . . . . . . . . .-1.75V (max)
Applications
• Drivers for various loads
- Relays, solenoids and motors
• Reliable replacement of discrete solutions
• Interfacing between low-level logic and high-current loads
Pin Configuration
IS1-2981RH-Q, IS1-2981EH-Q
(CDIP2-T18)
TOP VIEW
IN 1 1
IN 2 2
IN 3 3
IN 4 4
IN 5 5
IN 6 6
IN 7 7
IN 8 8
V
CC
9
18 OUT 1
17 OUT 2
16 OUT 3
15 OUT 4
14 OUT 5
13 OUT 6
12 OUT 7
11 OUT 8
10 GND
FN4869 Rev 1.00
Jun 24, 2013
Page 1 of 4
IS-2981RH, IS-2981EH
Ordering Information
ORDERING
NUMBER
(Note 3)
5962R0052001VVC
5962R0052002VVC
5962R0052001QVC
5962R0052001V9A
5962R0052002V9A
IS1-2981RH/PROTO
INTERNAL
MKT.NUMBER
(Notes 1, 2)
IS1-2981RH-Q
IS1-2981EH-Q
IS1-2981RH-8
IS0-2981RH-Q
IS0-2981EH-Q
IS1-2981RH/PROTO
IS1-2981RH/PROTO
PART
MARKING
Q 5962R00 52001VVC
Q 5962R00 52002VVC
Q 5962R00 52001QVC
TEMP. RANGE
(
°
C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(RoHS Compliant)
18 Ld SBDIP
18 Ld SBDIP
18 Ld SBDIP
Die
Die
18 Ld SBDIP
D18.3
D18.3
D18.3
D18.3
D18.3
PKG.
DWG. #
NOTE:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. For Moisture Sensitivity Level (MSL), please see device information page for
IS-2981RH, IS-2981EH
. For more information on MSL, please see tech
brief
TB363.
3. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table on page 2 must be used when ordering.
FN4869 Rev 1.00
Jun 24, 2013
Page 2 of 4
IS-2981RH, IS-2981EH
Die Characteristics
DIE DIMENSIONS:
2667µm x 5131µm (105 mils x 202 mils)
Thickness: 483µm
±25.4µm
(19 mils
±1
mil)
Substrate
HVTDLM, Bonded Wafer, Dielectric Isolation
Backside Finish
Silicon
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
)
Nitride Thickness: 4.0k
Å
±
1.0k
Å
Silox Thickness: 12.0k
Å
±4.0k
Å
Metallization
Top Metal 2: Ti/AlCu
Thickness: 1.6µm
±0.02µm
Metal 1: Ti/AlCu
Thickness: 0.8µm
±0.01µm
ASSEMBLY RELATED INFORMATION
Substrate Potential
Must be tied to GND.
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 10
5
A/cm
2
Transistor Count
68
Metallization Mask Layout
IS-2981RH, IS-2981EH
8
7
6
5
4
3
2
1
9
9
9
9
10
10A
10
11
12
13
14
15
16
17
18
NOTES:
4. Pad numbers correspond to package pin functions.
5. Bond to all four pad 9 locations for V
CC
current sharing purposes.
6. Bond to both pad 10 locations for GND current sharing purposes.
7. Pad 10A is not used in die applications.
8. Die backside must be connected to GND.
FN4869 Rev 1.00
Jun 24, 2013
Page 3 of 4
IS-2981RH, IS-2981EH
Ceramic Dual-In-Line Metal Seal Packages (SBDIP)
c1
-A-
-D-
BASE
METAL
M
-B-
bbb S C A - B S
BASE
PLANE
SEATING
PLANE
S1
b2
b
A A
D
S2
-C-
Q
A
L
D S
b1
M
(b)
SECTION A-A
(c)
LEAD FINISH
D18.3
MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C)
18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE
INCHES
SYMBOL
A
b
b1
b2
b3
c
c1
D
E
e
eA
eA/2
L
Q
S1
S2
MIN
-
0.014
0.014
0.045
0.023
0.008
0.008
-
0.220
MAX
0.200
0.026
0.023
0.065
0.045
0.018
0.015
0.960
0.310
MILLIMETERS
MIN
-
0.36
0.36
1.14
0.58
0.20
0.20
-
5.59
MAX
5.08
0.66
0.58
1.65
1.14
0.46
0.38
24.38
7.87
2.54 BSC
7.62 BSC
3.81 BSC
3.18
0.38
0.13
0.13
90
o
-
-
-
-
18
5.08
1.78
-
-
105
o
0.38
0.76
0.25
0.038
NOTES
-
2
3
-
4
2
3
-
-
-
-
-
-
5
6
7
-
-
-
-
2
8
Rev. 0 5/18/94
E
e
A
e
e
A/2
c
0.100 BSC
0.300 BSC
0.150 BSC
0.125
0.015
0.005
0.005
90
o
-
-
-
-
18
0.200
0.070
-
-
105
o
0.015
0.030
0.010
0.0015
ccc M C A - B S D S
aaa
M C A - B S D S
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. Dimension Q shall be measured from the seating plane to the
base plane.
6. Measure dimension S1 at all four corners.
7. Measure dimension S2 from the top of the ceramic body to the
nearest metallization or lead.
8. N is the maximum number of terminal positions.
9. Braze fillets shall be concave.
10. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
11. Controlling dimension: INCH.
aaa
bbb
ccc
M
N
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For additional products, see
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in the quality certifications found at
www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
FN4869 Rev 1.00
Jun 24, 2013
Page 4 of 4
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