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3N161

Description
3N161
CategoryDiscrete semiconductor    The transistor   
File Size41KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

3N161 Overview

3N161

3N161 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)0.125 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.36 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
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