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TFMBJ150-T

Description
Trans Voltage Suppressor Diode, 600W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size109KB,10 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric View All

TFMBJ150-T Overview

Trans Voltage Suppressor Diode, 600W, 150V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

TFMBJ150-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
Maximum breakdown voltage204 V
Minimum breakdown voltage167 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
TVS
TFMBJ
SURFACE MOUNT GPP
TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
SERIES
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
Ratings at 25
o
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Typical Current Squarad Time
o
SYMBOL
P
PPM
I
PPM
P
M
(AV)
I
FSM
I
2
t
VALUE
Minimum 600
SEE TABLE 1
5.0
100
41.5
UNITS
Watts
Amps
Watts
Amps
A
2
/Sec
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
V
F
T
J
, T
STG
SEE NOTE 4
-55 to + 150
Volts
0
C
2016-10
REV:B
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
o
3. Lead temperature at T
L
= 25 C
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. V
F
= 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and V
F
= 5.0V on TFMBJ-100 thru TFMBJ-170 devices.

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