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BUZ45B

Description
MOSFETs;10A;500V;TO-3
CategoryDiscrete semiconductor   
File Size223KB,2 Pages
ManufacturerInchange Semiconductor
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BUZ45B Overview

MOSFETs;10A;500V;TO-3

isc N-Channel Mosfet Transistor
·FEATURES
·Static
Drain-Source On-Resistance
: R
DS(on)
= 0.5Ω(Max)
·SOA
is Power Dissipation Limited
·High
speed switching
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
Designed for applications such as switching regulators, switching
converters, motor drivers,relay drivers and drivers for high power
bipolar switching transistors requiring high speed and low gate
drive power.
·ABSOLUTE
MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
DM
P
tot
T
j
T
stg
BUZ45B
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=35℃
Drain Current-Single Plused
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
500
±20
10
40
125
150
-55~150
UNIT
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.0
35
UNIT
℃/W
℃/W
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www.iscsemi.com
1
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is registered trademark

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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