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10N50

Description
MOSFETs;10A;500V;TO-3
CategoryDiscrete semiconductor   
File Size210KB,2 Pages
ManufacturerInchange Semiconductor
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10N50 Overview

MOSFETs;10A;500V;TO-3

isc N-Channel MOSFET Transistor
10N50
DESCRIPTION
·Drain
Current –I
D
=10A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 500V(Min)
·Fast
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for applications such as switching regulators,
switching converters,motor drivers,relay drivers and
drivers for power bipolar switching transistors requiring
High speed and low gate drive power
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
500
±20
10
150
150
-55~150
UNIT
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
0.83
75
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1
isc & iscsemi is registered trademark

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