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GS8160EV36AGT-350T

Description
Cache SRAM, 512KX36, 4.5ns, CMOS, PQFP100, TQFP-100
Categorystorage    storage   
File Size491KB,24 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS8160EV36AGT-350T Overview

Cache SRAM, 512KX36, 4.5ns, CMOS, PQFP100, TQFP-100

GS8160EV36AGT-350T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codecompli
ECCN code3A991.B.2.B
Maximum access time4.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee3
length20 mm
memory density18874368 bi
Memory IC TypeCACHE SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.6 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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